Inventor
FUJIWARA NOBUO
JP22 patents
⚠️ This page may combine multiple inventors who share the name “FUJIWARA NOBUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
19 patentsUS5442213AAug 15, 1995
Semiconductor device with high dielectric capacitor having sidewall spacers
MITSUBISHI ELECTRIC CORP82 citations96
US6232209B1May 15, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP58 citations93
US5668041ASep 16, 1997
Method of manufacturing a semiconductor device having a capacitor
MITSUBISHI ELECTRIC CORP18 citations92
US5534458AJul 9, 1996
Method of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacers
MITSUBISHI ELECTRIC CORP27 citations92
US4915979AApr 10, 1990
Semiconductor wafer treating device utilizing ECR plasma
MITSUBISHI ELECTRIC CORP24 citations92
US4877509AOct 31, 1989
Semiconductor wafer treating apparatus utilizing a plasma
MITSUBISHI ELECTRIC CORP43 citations92
US5435886AJul 25, 1995
Method of plasma etching
MITSUBISHI ELECTRIC CORP39 citations91
US4982138AJan 1, 1991
Semiconductor wafer treating device utilizing a plasma
MITSUBISHI ELECTRIC CORP19 citations81
US5652186AJul 29, 1997
Semiconductor device and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP4 citations74
US5695597ADec 9, 1997
Plasma reaction apparatus
MITSUBISHI ELECTRIC CORP7 citations73
US5292395AMar 8, 1994
ECR plasma reaction apparatus having uniform magnetic field gradient
MITSUBISHI ELECTRIC CORP8 citations73
US5304775AApr 19, 1994
Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element
MITSUBISHI ELECTRIC CORP9 citations72
US6156639ADec 5, 2000
Method for manufacturing contact structure
MITSUBISHI ELECTRIC CORP11 citations71
US11189689B2Nov 30, 2021
Semiconductor device including an active region that includes a switchable current path
MITSUBISHI ELECTRIC CORP2 citations69
US4873162AOct 10, 1989
X-ray mask and a manufacture method therefor
MITSUBISHI ELECTRIC CORP16 citations69
US12477789B2Nov 18, 2025
Semiconductor device having a plurality of pillars and method of manufacturing the semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US10497850B2Dec 3, 2019
Thermoelectric converter and manufacturing method for manufacturing thermoelectric converter
MITSUBISHI ELECTRIC CORP0 citations52
US10453951B2Oct 22, 2019
Semiconductor device having a gate trench and an outside trench
MITSUBISHI ELECTRIC CORP0 citations41
US9773874B2Sep 26, 2017
Silicon carbide semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP0 citations41