P

Inventor

FUJIWARA NOBUO

JP22 patents
⚠️ This page may combine multiple inventors who share the name “FUJIWARA NOBUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

19 patents
US5442213AAug 15, 1995

Semiconductor device with high dielectric capacitor having sidewall spacers

MITSUBISHI ELECTRIC CORP82 citations96
US6232209B1May 15, 2001

Semiconductor device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP58 citations93
US5668041ASep 16, 1997

Method of manufacturing a semiconductor device having a capacitor

MITSUBISHI ELECTRIC CORP18 citations92
US5534458AJul 9, 1996

Method of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacers

MITSUBISHI ELECTRIC CORP27 citations92
US4915979AApr 10, 1990

Semiconductor wafer treating device utilizing ECR plasma

MITSUBISHI ELECTRIC CORP24 citations92
US4877509AOct 31, 1989

Semiconductor wafer treating apparatus utilizing a plasma

MITSUBISHI ELECTRIC CORP43 citations92
US5435886AJul 25, 1995

Method of plasma etching

MITSUBISHI ELECTRIC CORP39 citations91
US4982138AJan 1, 1991

Semiconductor wafer treating device utilizing a plasma

MITSUBISHI ELECTRIC CORP19 citations81
US5652186AJul 29, 1997

Semiconductor device and a method of manufacturing thereof

MITSUBISHI ELECTRIC CORP4 citations74
US5695597ADec 9, 1997

Plasma reaction apparatus

MITSUBISHI ELECTRIC CORP7 citations73
US5292395AMar 8, 1994

ECR plasma reaction apparatus having uniform magnetic field gradient

MITSUBISHI ELECTRIC CORP8 citations73
US5304775AApr 19, 1994

Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element

MITSUBISHI ELECTRIC CORP9 citations72
US6156639ADec 5, 2000

Method for manufacturing contact structure

MITSUBISHI ELECTRIC CORP11 citations71
US11189689B2Nov 30, 2021

Semiconductor device including an active region that includes a switchable current path

MITSUBISHI ELECTRIC CORP2 citations69
US4873162AOct 10, 1989

X-ray mask and a manufacture method therefor

MITSUBISHI ELECTRIC CORP16 citations69
US12477789B2Nov 18, 2025

Semiconductor device having a plurality of pillars and method of manufacturing the semiconductor device

MITSUBISHI ELECTRIC CORP0 citations52
US10497850B2Dec 3, 2019

Thermoelectric converter and manufacturing method for manufacturing thermoelectric converter

MITSUBISHI ELECTRIC CORP0 citations52
US10453951B2Oct 22, 2019

Semiconductor device having a gate trench and an outside trench

MITSUBISHI ELECTRIC CORP0 citations41
US9773874B2Sep 26, 2017

Silicon carbide semiconductor device and manufacturing method therefor

MITSUBISHI ELECTRIC CORP0 citations41

VICTOR COMPANY OF JAPAN

2 patents

RENESAS TECH CORP

1 patent