Inventor
LEE PETER W
US84 patents
⚠️ This page may combine multiple inventors who share the name “LEE PETER W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APLUS FLASH TECHNOLOGY INC
36 patentsUS6862223B1Mar 1, 2005
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
APLUS FLASH TECHNOLOGY INC130 citations99
US6714457B1Mar 30, 2004
Parallel channel programming scheme for MLC flash memory
APLUS FLASH TECHNOLOGY INC164 citations99
US5953255ASep 14, 1999
Low voltage, low current hot-hole injection erase and hot-electron programmable flash memory with enhanced endurance
APLUS FLASH TECHNOLOGY INC176 citations99
US7369438B2May 6, 2008
Combo memory design and technology for multiple-function java card, sim-card, bio-passport and bio-id card applications
APLUS FLASH TECHNOLOGY INC65 citations98
US6850438B2Feb 1, 2005
Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
APLUS FLASH TECHNOLOGY INC75 citations98
US6757196B1Jun 29, 2004
Two transistor flash memory cell for use in EEPROM arrays with a programmable logic device
APLUS FLASH TECHNOLOGY INC83 citations98
US6620682B1Sep 16, 2003
Set of three level concurrent word line bias conditions for a nor type flash memory array
APLUS FLASH TECHNOLOGY INC110 citations98
US6498752B1Dec 24, 2002
Three step write process used for a nonvolatile NOR type EEPROM memory
APLUS FLASH TECHNOLOGY INC83 citations98
US6023188AFeb 8, 2000
Positive/negative high voltage charge pump system
APLUS FLASH TECHNOLOGY INC101 citations98
US5835420ANov 10, 1998
Node-precise voltage regulation for a MOS memory system
APLUS FLASH TECHNOLOGY INC104 citations98
US6556481B1Apr 29, 2003
3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
APLUS FLASH TECHNOLOGY INC114 citations97
US7110302B2Sep 19, 2006
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
APLUS FLASH TECHNOLOGY INC25 citations96
US7102929B2Sep 5, 2006
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
APLUS FLASH TECHNOLOGY INC51 citations96
US7075826B2Jul 11, 2006
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
APLUS FLASH TECHNOLOGY INC28 citations96
US6788612B2Sep 7, 2004
Flash memory array structure suitable for multiple simultaneous operations
APLUS FLASH TECHNOLOGY INC50 citations96
US6009022ADec 28, 1999
Node-precise voltage regulation for a MOS memory system
APLUS FLASH TECHNOLOGY INC83 citations96
US5917757AJun 29, 1999
Flash memory with high speed erasing structure using thin oxide semiconductor devices
APLUS FLASH TECHNOLOGY INC67 citations96
US7372736B2May 13, 2008
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
APLUS FLASH TECHNOLOGY INC13 citations93
US7289366B2Oct 30, 2007
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
APLUS FLASH TECHNOLOGY INC19 citations93
US7283401B2Oct 16, 2007
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
APLUS FLASH TECHNOLOGY INC17 citations93
US7177190B2Feb 13, 2007
Combination nonvolatile integrated memory system using a universal technology most suitable for high-density, high-flexibility and high-security sim-card, smart-card and e-passport applications
APLUS FLASH TECHNOLOGY INC46 citations93
US7154783B2Dec 26, 2006
Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
APLUS FLASH TECHNOLOGY INC21 citations93
US7149120B2Dec 12, 2006
Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
APLUS FLASH TECHNOLOGY INC13 citations93
US7087953B2Aug 8, 2006
Unified non-volatile memory device and method for integrating NOR and NAND-type flash memory and EEPROM device on a single substrate
APLUS FLASH TECHNOLOGY INC23 citations93
US7064978B2Jun 20, 2006
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
APLUS FLASH TECHNOLOGY INC33 citations93
US6788611B2Sep 7, 2004
Flash memory array structure suitable for multiple simultaneous operations
APLUS FLASH TECHNOLOGY INC18 citations93
US6717846B1Apr 6, 2004
Non-volatile semiconductor memory having split-gate memory cells mirrored in a virtual ground configuration
APLUS FLASH TECHNOLOGY INC18 citations93
US6687154B2Feb 3, 2004
Highly-integrated flash memory and mask ROM array architecture
APLUS FLASH TECHNOLOGY INC21 citations93
US6660585B1Dec 9, 2003
Stacked gate flash memory cell with reduced disturb conditions
APLUS FLASH TECHNOLOGY INC48 citations93
US6628563B1Sep 30, 2003
Flash memory array for multiple simultaneous operations
APLUS FLASH TECHNOLOGY INC48 citations93
US6584034B1Jun 24, 2003
Flash memory array structure suitable for multiple simultaneous operations
APLUS FLASH TECHNOLOGY INC28 citations93
US6275417B1Aug 14, 2001
Multiple level flash memory
APLUS FLASH TECHNOLOGY INC35 citations93
US6258668B1Jul 10, 2001
Array architecture and process flow of nonvolatile memory devices for mass storage applications
APLUS FLASH TECHNOLOGY INC29 citations93
US6181607B1Jan 30, 2001
Reversed split-gate cell array
APLUS FLASH TECHNOLOGY INC19 citations93
US6134150AOct 17, 2000
Erase condition for flash memory
APLUS FLASH TECHNOLOGY INC22 citations93
US5920503AJul 6, 1999
Flash memory with novel bitline decoder and sourceline latch
APLUS FLASH TECHNOLOGY INC49 citations93
APLUS INTEGRATED CIRCUITS INC
8 patentsUS5822252AOct 13, 1998
Flash memory wordline decoder with overerase repair
APLUS INTEGRATED CIRCUITS INC181 citations99
US5768193AJun 16, 1998
Bit-refreshable method and circuit for refreshing a nonvolatile flash memory
APLUS INTEGRATED CIRCUITS INC207 citations99
US5748538AMay 5, 1998
OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array
APLUS INTEGRATED CIRCUITS INC182 citations99
US5748545AMay 5, 1998
Memory device with on-chip manufacturing and memory cell defect detection capability
APLUS INTEGRATED CIRCUITS INC116 citations98
US5777923AJul 7, 1998
Flash memory read/write controller
APLUS INTEGRATED CIRCUITS INC79 citations96
US5774396AJun 30, 1998
Flash memory with row redundancy
APLUS INTEGRATED CIRCUITS INC71 citations96
US5687121ANov 11, 1997
Flash EEPROM worldline decoder
APLUS INTEGRATED CIRCUITS INC58 citations96
US5600586AFeb 4, 1997
Flat-cell ROM and decoder
APLUS INTEGRATED CIRCUITS INC59 citations96
APPLIED MATERIALS INC
6 patentsUS6374770B1Apr 23, 2002
Apparatus for improving film stability of halogen-doped silicon oxide films
APPLIED MATERIALS INC184 citations98
US5314845AMay 24, 1994
Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
APPLIED MATERIALS INC122 citations97
US6103601AAug 15, 2000
Method and apparatus for improving film stability of halogen-doped silicon oxide films
APPLIED MATERIALS INC64 citations96
US5958510ASep 28, 1999
Method and apparatus for forming a thin polymer layer on an integrated circuit structure
APPLIED MATERIALS INC153 citations95
US5354387AOct 11, 1994
Boron phosphorus silicate glass composite layer on semiconductor wafer
APPLIED MATERIALS INC44 citations95
US5166101ANov 24, 1992
Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer
APPLIED MATERIALS INC73 citations95
Showing the top 50 of 84 patents by PatentIndex Score.