Inventor
TANIZAKI HIROAKI
JP59 patents
⚠️ This page may combine multiple inventors who share the name “TANIZAKI HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
19 patentsUS6400632B1Jun 4, 2002
Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall
MITSUBISHI ELECTRIC CORP56 citations96
US6384674B2May 7, 2002
Semiconductor device having hierarchical power supply line structure improved in operating speed
MITSUBISHI ELECTRIC CORP73 citations96
US6385125B1May 7, 2002
Synchronous semiconductor integrated circuit device capable of test time reduction
MITSUBISHI ELECTRIC CORP57 citations95
US6549445B2Apr 15, 2003
Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof
MITSUBISHI ELECTRIC CORP18 citations93
US6381167B2Apr 30, 2002
Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof
MITSUBISHI ELECTRIC CORP17 citations93
US6333869B1Dec 25, 2001
Semiconductor memory device with readily changeable memory capacity
MITSUBISHI ELECTRIC CORP25 citations93
US6288573B1Sep 11, 2001
Semiconductor device capable of operating fast with a low voltage and reducing power consumption during standby
MITSUBISHI ELECTRIC CORP21 citations93
US6163488ADec 19, 2000
Semiconductor device with antifuse
MITSUBISHI ELECTRIC CORP43 citations93
US6055206AApr 25, 2000
Synchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operation
MITSUBISHI ELECTRIC CORP28 citations93
US6411560B1Jun 25, 2002
Semiconductor memory device capable of reducing leakage current flowing into substrate
MITSUBISHI ELECTRIC CORP48 citations92
US6707737B2Mar 16, 2004
Memory system capable of switching between a reference voltage for normal operation and a reference voltage for burn-in test
MITSUBISHI ELECTRIC CORP13 citations84
US6603685B2Aug 5, 2003
Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage
MITSUBISHI ELECTRIC CORP15 citations84
US6310808B1Oct 30, 2001
Semiconductor memory device having structure for high-speed data processing
MITSUBISHI ELECTRIC CORP15 citations84
US6430091B2Aug 6, 2002
Semiconductor memory device having reduced current consumption at internal boosted potential
MITSUBISHI ELECTRIC CORP7 citations74
US6330202B1Dec 11, 2001
Semiconductor memory device having write data line
MITSUBISHI ELECTRIC CORP7 citations74
US6147544ANov 14, 2000
Data transfer circuit transferring complementary data signals
MITSUBISHI ELECTRIC CORP9 citations74
US6466509B1Oct 15, 2002
Semiconductor memory device having a column select line transmitting a column select signal
MITSUBISHI ELECTRIC CORP12 citations73
US6463098B1Oct 8, 2002
Data transfer circuit transferring 2-bit data through 4 data lines
MITSUBISHI ELECTRIC CORP2 citations63
US6445633B2Sep 3, 2002
Read amplifier circuit for high-speed reading and semiconductor memory device employing the read amplifier circuit
MITSUBISHI ELECTRIC CORP2 citations62
RENESAS TECH CORP
13 patentsUS7436699B2Oct 14, 2008
Nonvolatile semiconductor memory device
RENESAS TECH CORP78 citations98
US7423898B2Sep 9, 2008
Nonvolatile semiconductor memory device
RENESAS TECH CORP62 citations98
US6842366B2Jan 11, 2005
Thin film magnetic memory device executing self-reference type data read
RENESAS TECH CORP55 citations93
US6778445B2Aug 17, 2004
Pipeline nonvolatile memory device with multi-bit parallel read and write suitable for cache memory.
RENESAS TECH CORP28 citations93
US6762953B2Jul 13, 2004
Nonvolatile memory device with sense amplifier securing reading margin
RENESAS TECH CORP46 citations93
US6738285B2May 18, 2004
Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements
RENESAS TECH CORP28 citations93
US7369429B2May 6, 2008
Non-volatile memory device having toggle cell
RENESAS TECH CORP19 citations84
US6856537B2Feb 15, 2005
Thin film magnetic memory device having dummy cell
RENESAS TECH CORP16 citations84
US6791876B2Sep 14, 2004
Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like
RENESAS TECH CORP17 citations84
US6788569B2Sep 7, 2004
Thin film magnetic memory device reducing a charging time of a data line in a data read operation
RENESAS TECH CORP13 citations84
US6781873B2Aug 24, 2004
Non-volatile memory device capable of generating accurate reference current for determination
RENESAS TECH CORP14 citations84
US6728122B2Apr 27, 2004
Semiconductor memory device capable of rewriting data signal
RENESAS TECH CORP7 citations74
US7295465B2Nov 13, 2007
Thin film magnetic memory device reducing a charging time of a data line in a data read operation
RENESAS TECH CORP3 citations63
SONY CORP
8 patentsUS6300013B1Oct 9, 2001
Material for negative electrode and nonaqueous-electrolyte battery incorporating the same
SONY CORP105 citations98
US6679925B1Jan 20, 2004
Methods of manufacturing negative material and secondary battery
SONY CORP56 citations96
US6677080B2Jan 13, 2004
Non-aqueous electrolyte secondary cell
SONY CORP28 citations93
US6884543B2Apr 26, 2005
Material for positive electrode and secondary battery
SONY CORP15 citations83
US7309545B2Dec 18, 2007
Anode material and battery using the same
SONY CORP2 citations63
US7125630B2Oct 24, 2006
Non-aqueous electrolyte battery
SONY CORP3 citations63
US7045251B2May 16, 2006
Material for positive electrode and secondary battery
SONY CORP2 citations62
US6835226B2Dec 28, 2004
Negative electrode active material, method of producing the same, and nonaqueous electrolyte cell
SONY CORP5 citations62
MITSUBISHI ELECTRIC ENG
4 patentsUS7233537B2Jun 19, 2007
Thin film magnetic memory device provided with a dummy cell for data read reference
MITSUBISHI ELECTRIC ENG69 citations98
US6940767B2Sep 6, 2005
Semiconductor memory device having a plurality of signal lines for writing and reading data
MITSUBISHI ELECTRIC ENG12 citations84
US7050349B2May 23, 2006
Semiconductor integrated circuit device and semiconductor memory device reprogrammable after assembly
MITSUBISHI ELECTRIC ENG10 citations74
US6885235B2Apr 26, 2005
Semiconductor integrated circuit device with internal power supply potential generation circuit
MITSUBISHI ELECTRIC ENG11 citations73
TANIZAKI HIROAKI
2 patentsNISSAN MOTOR
2 patentsUS9843033B2Dec 12, 2017
Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary battery
NISSAN MOTOR3 citations71
US9537148B2Jan 3, 2017
Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary battery
NISSAN MOTOR4 citations71
FUJI HEAVY IND LTD
1 patentOHARA KENJI
1 patentShowing the top 50 of 59 patents by PatentIndex Score.