P

Inventor

TANIZAKI HIROAKI

JP59 patents
⚠️ This page may combine multiple inventors who share the name “TANIZAKI HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

19 patents
US6400632B1Jun 4, 2002

Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall

MITSUBISHI ELECTRIC CORP56 citations96
US6384674B2May 7, 2002

Semiconductor device having hierarchical power supply line structure improved in operating speed

MITSUBISHI ELECTRIC CORP73 citations96
US6385125B1May 7, 2002

Synchronous semiconductor integrated circuit device capable of test time reduction

MITSUBISHI ELECTRIC CORP57 citations95
US6549445B2Apr 15, 2003

Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof

MITSUBISHI ELECTRIC CORP18 citations93
US6381167B2Apr 30, 2002

Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof

MITSUBISHI ELECTRIC CORP17 citations93
US6333869B1Dec 25, 2001

Semiconductor memory device with readily changeable memory capacity

MITSUBISHI ELECTRIC CORP25 citations93
US6288573B1Sep 11, 2001

Semiconductor device capable of operating fast with a low voltage and reducing power consumption during standby

MITSUBISHI ELECTRIC CORP21 citations93
US6163488ADec 19, 2000

Semiconductor device with antifuse

MITSUBISHI ELECTRIC CORP43 citations93
US6055206AApr 25, 2000

Synchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operation

MITSUBISHI ELECTRIC CORP28 citations93
US6411560B1Jun 25, 2002

Semiconductor memory device capable of reducing leakage current flowing into substrate

MITSUBISHI ELECTRIC CORP48 citations92
US6707737B2Mar 16, 2004

Memory system capable of switching between a reference voltage for normal operation and a reference voltage for burn-in test

MITSUBISHI ELECTRIC CORP13 citations84
US6603685B2Aug 5, 2003

Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage

MITSUBISHI ELECTRIC CORP15 citations84
US6310808B1Oct 30, 2001

Semiconductor memory device having structure for high-speed data processing

MITSUBISHI ELECTRIC CORP15 citations84
US6430091B2Aug 6, 2002

Semiconductor memory device having reduced current consumption at internal boosted potential

MITSUBISHI ELECTRIC CORP7 citations74
US6330202B1Dec 11, 2001

Semiconductor memory device having write data line

MITSUBISHI ELECTRIC CORP7 citations74
US6147544ANov 14, 2000

Data transfer circuit transferring complementary data signals

MITSUBISHI ELECTRIC CORP9 citations74
US6466509B1Oct 15, 2002

Semiconductor memory device having a column select line transmitting a column select signal

MITSUBISHI ELECTRIC CORP12 citations73
US6463098B1Oct 8, 2002

Data transfer circuit transferring 2-bit data through 4 data lines

MITSUBISHI ELECTRIC CORP2 citations63
US6445633B2Sep 3, 2002

Read amplifier circuit for high-speed reading and semiconductor memory device employing the read amplifier circuit

MITSUBISHI ELECTRIC CORP2 citations62

RENESAS TECH CORP

13 patents
US7436699B2Oct 14, 2008

Nonvolatile semiconductor memory device

RENESAS TECH CORP78 citations98
US7423898B2Sep 9, 2008

Nonvolatile semiconductor memory device

RENESAS TECH CORP62 citations98
US6842366B2Jan 11, 2005

Thin film magnetic memory device executing self-reference type data read

RENESAS TECH CORP55 citations93
US6778445B2Aug 17, 2004

Pipeline nonvolatile memory device with multi-bit parallel read and write suitable for cache memory.

RENESAS TECH CORP28 citations93
US6762953B2Jul 13, 2004

Nonvolatile memory device with sense amplifier securing reading margin

RENESAS TECH CORP46 citations93
US6738285B2May 18, 2004

Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements

RENESAS TECH CORP28 citations93
US7369429B2May 6, 2008

Non-volatile memory device having toggle cell

RENESAS TECH CORP19 citations84
US6856537B2Feb 15, 2005

Thin film magnetic memory device having dummy cell

RENESAS TECH CORP16 citations84
US6791876B2Sep 14, 2004

Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like

RENESAS TECH CORP17 citations84
US6788569B2Sep 7, 2004

Thin film magnetic memory device reducing a charging time of a data line in a data read operation

RENESAS TECH CORP13 citations84
US6781873B2Aug 24, 2004

Non-volatile memory device capable of generating accurate reference current for determination

RENESAS TECH CORP14 citations84
US6728122B2Apr 27, 2004

Semiconductor memory device capable of rewriting data signal

RENESAS TECH CORP7 citations74
US7295465B2Nov 13, 2007

Thin film magnetic memory device reducing a charging time of a data line in a data read operation

RENESAS TECH CORP3 citations63

SONY CORP

8 patents

MITSUBISHI ELECTRIC ENG

4 patents

TANIZAKI HIROAKI

2 patents

NISSAN MOTOR

2 patents

FUJI HEAVY IND LTD

1 patent

OHARA KENJI

1 patent

Showing the top 50 of 59 patents by PatentIndex Score.