Inventor
BHATTACHARYYA MANOJ K
US56 patents
⚠️ This page may combine multiple inventors who share the name “BHATTACHARYYA MANOJ K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEWLETT PACKARD DEVELOPMENT CO
25 patentsUS6819586B1Nov 16, 2004
Thermally-assisted magnetic memory structures
HEWLETT PACKARD DEVELOPMENT CO68 citations96
US6791865B2Sep 14, 2004
Memory device capable of calibration and calibration methods therefor
HEWLETT PACKARD DEVELOPMENT CO51 citations96
US6740947B1May 25, 2004
MRAM with asymmetric cladded conductor
HEWLETT PACKARD DEVELOPMENT CO63 citations96
US6727105B1Apr 27, 2004
Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
HEWLETT PACKARD DEVELOPMENT CO54 citations96
US6608790B2Aug 19, 2003
Write current compensation for temperature variations in memory arrays
HEWLETT PACKARD DEVELOPMENT CO52 citations96
US6590806B1Jul 8, 2003
Multibit magnetic memory element
HEWLETT PACKARD DEVELOPMENT CO57 citations96
US6927995B2Aug 9, 2005
Multi-bit MRAM device with switching nucleation sites
HEWLETT PACKARD DEVELOPMENT CO17 citations93
US6791874B2Sep 14, 2004
Memory device capable of calibration and calibration methods therefor
HEWLETT PACKARD DEVELOPMENT CO30 citations93
US6661688B2Dec 9, 2003
Method and article for concentrating fields at sense layers
HEWLETT PACKARD DEVELOPMENT CO26 citations91
US6906947B2Jun 14, 2005
In-plane toroidal memory cell with vertically stepped conductors
HEWLETT PACKARD DEVELOPMENT CO37 citations89
US8055160B2Nov 8, 2011
Liquid electrophotographic printer
HEWLETT PACKARD DEVELOPMENT CO8 citations84
US7079438B2Jul 18, 2006
Controlled temperature, thermal-assisted magnetic memory device
HEWLETT PACKARD DEVELOPMENT CO14 citations84
US6646910B2Nov 11, 2003
Magnetic memory using reverse magnetic field to improve half-select margin
HEWLETT PACKARD DEVELOPMENT CO13 citations84
US7078244B2Jul 18, 2006
Multi-bit MRAM device with switching nucleation sites
HEWLETT PACKARD DEVELOPMENT CO5 citations74
US6870758B2Mar 22, 2005
Magnetic memory device and methods for making same
HEWLETT PACKARD DEVELOPMENT CO4 citations74
US6865107B2Mar 8, 2005
Magnetic memory device
HEWLETT PACKARD DEVELOPMENT CO11 citations74
US6785160B1Aug 31, 2004
Method of providing stability of a magnetic memory cell
HEWLETT PACKARD DEVELOPMENT CO7 citations74
US6791872B2Sep 14, 2004
Method and article for concentrating fields at sense layers
HEWLETT PACKARD DEVELOPMENT CO6 citations72
US6944053B2Sep 13, 2005
Magnetic memory with structure providing reduced coercivity
HEWLETT PACKARD DEVELOPMENT CO6 citations71
US7239568B2Jul 3, 2007
Current threshold detector
HEWLETT PACKARD DEVELOPMENT CO5 citations63
US7193259B2Mar 20, 2007
Thermally written magnetic memory device
HEWLETT PACKARD DEVELOPMENT CO2 citations63
US6985381B2Jan 10, 2006
System and method for reading magnetization orientation of MRAM cells
HEWLETT PACKARD DEVELOPMENT CO2 citations62
US6724027B2Apr 20, 2004
Magnetic shielding for MRAM devices
HEWLETT PACKARD DEVELOPMENT CO4 citations59
US6979998B2Dec 27, 2005
Magnetic filter
HEWLETT PACKARD DEVELOPMENT CO2 citations57
US10168644B2Jan 1, 2019
Composite coating and substrate used in liquid electrophotographic printing and method
HEWLETT PACKARD DEVELOPMENT CO0 citations52
HEWLETT PACKARD CO
11 patentsUS6169686B1Jan 2, 2001
Solid-state memory with magnetic storage cells
HEWLETT PACKARD CO91 citations98
US6097626AAug 1, 2000
MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells
HEWLETT PACKARD CO101 citations98
US6172904B1Jan 9, 2001
Magnetic memory cell with symmetric switching characteristics
HEWLETT PACKARD CO74 citations96
US6134139AOct 17, 2000
Magnetic memory structure with improved half-select margin
HEWLETT PACKARD CO79 citations96
US5982660ANov 9, 1999
Magnetic memory cell with off-axis reference layer orientation for improved response
HEWLETT PACKARD CO66 citations96
US5930087AJul 27, 1999
Robust recording head for near-contact operation
HEWLETT PACKARD CO64 citations96
US4881143ANov 14, 1989
Compensated magneto-resistive read head
HEWLETT PACKARD CO60 citations95
US6504221B1Jan 7, 2003
Magneto-resistive device including soft reference layer having embedded conductors
HEWLETT PACKARD CO44 citations93
US6424565B2Jul 23, 2002
Solid-state memory with magnetic storage cells
HEWLETT PACKARD CO17 citations92
US5434733AJul 18, 1995
Planar head having separate read and write gaps
HEWLETT PACKARD CO35 citations92
US6607924B2Aug 19, 2003
Solid-state memory with magnetic storage cells
HEWLETT PACKARD CO3 citations63
APPLE INC
5 patentsUS10436607B2Oct 8, 2019
Motion sensing using hall voltage signals
APPLE INC6 citations84
US11422104B2Aug 23, 2022
Exposed wire-bonding for sensing liquid and water in electronic devices
APPLE INC4 citations71
US10557724B1Feb 11, 2020
Angle detection of a rotating system using a single magnet and multiple hall sensors
APPLE INC2 citations66
US10809317B2Oct 20, 2020
Spatially dependent correction of magnetic field sensor readings
APPLE INC1 citations63
US10859407B2Dec 8, 2020
Motion sensing using hall voltage signals
APPLE INC0 citations52
BHATTACHARYYA MANOJ K
3 patentsHEWLETT PACKARD COMPANY L P
1 patentNAUKA KRZYSZTOF
1 patent(unassigned)
1 patentNG HOU T
1 patentSAMSUNG ELECTRONICS CO LTD
1 patentGANAPATHIAPPAN SIVAPACKIA
1 patentShowing the top 50 of 56 patents by PatentIndex Score.