Inventor
FASOLI LUCA
US40 patents
⚠️ This page may combine multiple inventors who share the name “FASOLI LUCA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK 3D LLC
17 patentsUS7233024B2Jun 19, 2007
Three-dimensional memory device incorporating segmented bit line memory array
SANDISK 3D LLC239 citations99
US7733685B2Jun 8, 2010
Cross point memory cell with distributed diodes and method of making same
SANDISK 3D LLC102 citations98
US7505321B2Mar 17, 2009
Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
SANDISK 3D LLC84 citations98
US8027209B2Sep 27, 2011
Continuous programming of non-volatile memory
SANDISK 3D LLC30 citations93
US7940554B2May 10, 2011
Reduced complexity array line drivers for 3D matrix arrays
SANDISK 3D LLC24 citations93
US7177183B2Feb 13, 2007
Multiple twin cell non-volatile memory array and logic block structure and method therefor
SANDISK 3D LLC31 citations93
US7966532B2Jun 21, 2011
Method for selectively retrieving column redundancy data in memory device
SANDISK 3D LLC26 citations88
US9245629B2Jan 26, 2016
Method for non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
SANDISK 3D LLC8 citations84
US8824191B2Sep 2, 2014
Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
SANDISK 3D LLC16 citations84
US7885091B2Feb 8, 2011
Limited charge delivery for programming non-volatile storage elements
SANDISK 3D LLC7 citations84
US7132335B2Nov 7, 2006
Semiconductor device with localized charge storage dielectric and method of making same
SANDISK 3D LLC15 citations84
US8050109B2Nov 1, 2011
Semiconductor memory with improved memory block switching
SANDISK 3D LLC11 citations83
USRE46154ESep 20, 2016
Page buffer program command and methods to reprogram pages without re-inputting data to a memory device
SANDISK 3D LLC2 citations63
US7996736B2Aug 9, 2011
Bad page marking strategy for fast readout in memory
SANDISK 3D LLC3 citations61
USRE46348EMar 21, 2017
Program cycle skip
SANDISK 3D LLC0 citations52
US9105576B2Aug 11, 2015
Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
SANDISK 3D LLC0 citations52
US8358528B2Jan 22, 2013
Memory system with sectional data lines
SANDISK 3D LLC0 citations52
YAN TIANHONG
8 patentsUS8238174B2Aug 7, 2012
Continuous programming of non-volatile memory
YAN TIANHONG12 citations84
US8130528B2Mar 6, 2012
Memory system with sectional data lines
YAN TIANHONG9 citations84
US8780651B2Jul 15, 2014
Continuous programming of non-volatile memory
YAN TIANHONG3 citations63
US8711596B2Apr 29, 2014
Memory system with data line switching scheme
YAN TIANHONG1 citations63
US8279650B2Oct 2, 2012
Memory system with data line switching scheme
YAN TIANHONG4 citations63
US8982597B2Mar 17, 2015
Memory system with sectional data lines
YAN TIANHONG0 citations52
US8913413B2Dec 16, 2014
Memory system with sectional data lines
YAN TIANHONG0 citations52
US8638586B2Jan 28, 2014
Memory system with data line switching scheme
YAN TIANHONG0 citations52
BALAKRISHNAN GOPINATH
4 patentsUS8223525B2Jul 17, 2012
Page register outside array and sense amplifier interface
BALAKRISHNAN GOPINATH24 citations91
US8213243B2Jul 3, 2012
Program cycle skip
BALAKRISHNAN GOPINATH11 citations83
US8395948B2Mar 12, 2013
Program cycle skip
BALAKRISHNAN GOPINATH1 citations62
US8427890B2Apr 23, 2013
Program cycle skip
BALAKRISHNAN GOPINATH0 citations51
MATRIX SEMICONDUCTOR INC
3 patentsUS7005350B2Feb 28, 2006
Method for fabricating programmable memory array structures incorporating series-connected transistor strings
MATRIX SEMICONDUCTOR INC453 citations99
US6849905B2Feb 1, 2005
Semiconductor device with localized charge storage dielectric and method of making same
MATRIX SEMICONDUCTOR INC79 citations98
US6807119B2Oct 19, 2004
Array containing charge storage and dummy transistors and method of operating the array
MATRIX SEMICONDUCTOR INC16 citations84
SAMACHISA GEORGE
2 patentsUS8547720B2Oct 1, 2013
Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
SAMACHISA GEORGE39 citations94
US8526237B2Sep 3, 2013
Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
SAMACHISA GEORGE8 citations84
FASOLI LUCA
2 patentsUS8199576B2Jun 12, 2012
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
FASOLI LUCA43 citations93
US8397024B2Mar 12, 2013
Page buffer program command and methods to reprogram pages without re-inputting data to a memory device
FASOLI LUCA22 citations91