Inventor
YEO JAE-HYUN
KR22 patents
⚠️ This page may combine multiple inventors who share the name “YEO JAE-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS7482677B2Jan 27, 2009
Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures
SAMSUNG ELECTRONICS CO LTD88 citations98
US7201943B2Apr 10, 2007
Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material
SAMSUNG ELECTRONICS CO LTD506 citations98
US7151039B2Dec 19, 2006
Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD84 citations97
US7087482B2Aug 8, 2006
Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD44 citations95
US6946342B2Sep 20, 2005
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US6897106B2May 24, 2005
Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD29 citations92
US6884675B2Apr 26, 2005
Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US6734480B2May 11, 2004
Semiconductor capacitors having tantalum oxide layers
SAMSUNG ELECTRONICS CO LTD34 citations92
US7514315B2Apr 7, 2009
Methods of forming capacitor structures having aluminum oxide diffusion barriers
SAMSUNG ELECTRONICS CO LTD8 citations84
US7273822B2Sep 25, 2007
Methods and apparatus for forming thin films for semiconductor devices
SAMSUNG ELECTRONICS CO LTD9 citations74
US7094712B2Aug 22, 2006
High performance MIS capacitor with HfO2 dielectric
SAMSUNG ELECTRONICS CO LTD10 citations74
US7759718B2Jul 20, 2010
Method manufacturing capacitor dielectric
SAMSUNG ELECTRONICS CO LTD7 citations73
US7425514B2Sep 16, 2008
Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US10049943B2Aug 14, 2018
Methods of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations68
US7485585B2Feb 3, 2009
Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7442981B2Oct 28, 2008
Capacitor of semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7838438B2Nov 23, 2010
Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US7791125B2Sep 7, 2010
Semiconductor devices having dielectric layers and methods of forming the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7118975B2Oct 10, 2006
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations62
US6919243B2Jul 19, 2005
Methods of forming an integrated circuit capacitor in which a metal preprocessed layer is formed on an electrode thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US7648874B2Jan 19, 2010
Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure
SAMSUNG ELECTRONICS CO LTD0 citations52