Inventor
IM KI-VIN
KR34 patents
⚠️ This page may combine multiple inventors who share the name “IM KI-VIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS6946342B2Sep 20, 2005
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US6897106B2May 24, 2005
Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD29 citations92
US7871891B2Jan 18, 2011
Method of manufacturing semiconductor devices including capacitor support pads
SAMSUNG ELECTRONICS CO LTD29 citations91
US9716094B2Jul 25, 2017
Semiconductor device having capacitor and method of fabricating the semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations84
US7514315B2Apr 7, 2009
Methods of forming capacitor structures having aluminum oxide diffusion barriers
SAMSUNG ELECTRONICS CO LTD8 citations84
US9269720B1Feb 23, 2016
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD11 citations82
US8546270B2Oct 1, 2013
Atomic layer deposition apparatus
SAMSUNG ELECTRONICS CO LTD8 citations82
US7741222B2Jun 22, 2010
Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
SAMSUNG ELECTRONICS CO LTD17 citations81
US7094712B2Aug 22, 2006
High performance MIS capacitor with HfO2 dielectric
SAMSUNG ELECTRONICS CO LTD10 citations74
US7759718B2Jul 20, 2010
Method manufacturing capacitor dielectric
SAMSUNG ELECTRONICS CO LTD7 citations73
US7485585B2Feb 3, 2009
Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7838438B2Nov 23, 2010
Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US7824501B2Nov 2, 2010
In-situ method of cleaning vaporizer during dielectric layer deposition process
SAMSUNG ELECTRONICS CO LTD2 citations62
US7791125B2Sep 7, 2010
Semiconductor devices having dielectric layers and methods of forming the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7723182B2May 25, 2010
Storage electrode of a capacitor and a method of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US8357593B2Jan 22, 2013
Methods of removing water from semiconductor substrates and methods of depositing atomic layers using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9646971B2May 9, 2017
Semiconductor devices including nanowire capacitors and fabricating methods thereof
SAMSUNG ELECTRONICS CO LTD1 citations51
SK HYNIX INC
7 patentsUS11410813B2Aug 9, 2022
Semiconductor device with a booster layer and method for fabricating the same
SK HYNIX INC2 citations72
US12106904B2Oct 1, 2024
Semiconductor device with a booster layer and method for fabricating the same
SK HYNIX INC0 citations62
US12218182B2Feb 4, 2025
Semiconductor device and method for fabricating the same
SK HYNIX INC0 citations61
US12199140B2Jan 14, 2025
Semiconductor device and method for manufacturing the same
SK HYNIX INC0 citations61
US11973106B2Apr 30, 2024
Semiconductor device and method for manufacturing the same
SK HYNIX INC1 citations61
US12317520B2May 27, 2025
Semiconductor device and method for fabricating the same
SK HYNIX INC0 citations60
US11469310B2Oct 11, 2022
Semiconductor device
SK HYNIX INC1 citations60