Inventor

YOO JONG-RYEOL

KR27 patents

⚠️ This page may combine multiple inventors who share the name “YOO JONG-RYEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YOO JONG-RYEOL

SAMSUNG ELECTRONICS CO LTD

FinFET and method of manufacturing the same

Semiconductor devices, CMOS image sensors, and methods of manufacturing same

Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrode

Semiconductor devices including high-k dielectric materials

Methods of forming gate structures for semiconductor devices

Methods of forming double gate electrodes using tunnel and trench

Vertical tunneling field effect transistor and method for manufacturing the same

NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the same

Semiconductor device and method of manufacturing the same

Method of forming a gate of a semiconductor device

Semiconductor device having contact pads and method for manufacturing the same

Semiconductor device including fin field effect transistor and method of manufacturing the same

Methods of forming recessed gate electrodes having covered layer interfaces

Semiconductor devices including gate structures and leakage barrier oxides

Recessed gate electrodes having covered layer interfaces and methods of forming the same

Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layers

Semiconductor devices having gate structures and contact pads that are lower than the gate structures

Integrated circuit devices having buried insulation layers and methods of forming the same

Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region

Vertical tunneling field effect transistor and method for manufacturing the same

Semiconductor devices having lower and upper fins and method for fabricating the same

RYU JEONG-DO

Recessed channel array transistors, and semiconductor devices including a recessed channel array transistor

Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls

Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls

JEON IN-SANG

Methods of manufacturing semiconductor devices having low resistance buried gate structures

KIM SUNG MIN

Semiconductor devices having lower and upper fins and method for fabricating the same

PARK TAI-SU

Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices