Inventor

BOUR DAVID P

US135 patents

⚠️ This page may combine multiple inventors who share the name “BOUR DAVID P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BOUR DAVID P

XEROX CORP

Structure for nitride based laser diode with growth substrate removed

Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff

Method for nitride based laser diode with growth substrate removed

Method for nitride based laser diode with growth substrate removed using an intermediate substrate

Method and structure for nitride based laser diode arrays on an insulating substrate

Algainn elog led and laser diode structures for pure blue or green emission

Algainn pendeoepitaxy led and laser diode structures for pure blue or green emission

Fabrication of group III-V nitrides on mesas

Semiconductor laser or array formed by layer intermixing

Monolithic, multiple wavelength, dual polarization laser diode arrays

Dual polarization laser diode with quaternary material system

Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers

Polarization switchable quantum well laser

Nitride based semiconductor structures with highly reflective mirrors

Structure and method for index-guided buried heterostructure AlGaInN laser diodes

Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure

Structure and method for index-guided, inner stripe laser diode structure

Multiple-wavelength laser diode array using quantum well band filling

Loss-guided semiconductor lasers

Diode laser with tunnel barrier layer

Index-guided laser on a ridged (001) substrate

Method and structure for nitride based laser diode arrays on a conducting substrate

Structure and method for asymmetric waveguide nitride laser diode

Semiconductor devices constructed from crystallites

Semiconductor laser formed by layer intermixing

Index guided semiconductor laser biode with shallow selective IILD

Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD

Index guided semiconductor laser diode with reduced shunt leakage currents

Distributed feedback laser fabricated by lateral overgrowth of an active region

Light-emitting devices including polycrystalline gan layers and method of forming devices

TM-polarized laser emitter using III-V alloy with nitrogen

APPLE INC

LED structures for reduced non-radiative sidewall recombination

LED structures for reduced non-radiative sidewall recombination

LED structures for reduced non-radiative sidewall recombination

LED structures for reduced non-radiative sidewall recombination

AGILENT TECHNOLOGIES INC

Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL)

Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region

Method for obtaining high quality InGaAsN semiconductor devices

KIZILYALLI ISIK C

Monolithically integrated vertical JFET and Schottky diode

Method and system for planar regrowth in GAN electronic devices

SDL INC

In-situ acceptor activation in group III-v nitride compound semiconductors

AVAGO TECH ECBU IP SG PTE LTD

GaN laser with refractory metal ELOG masks for intracavity contact

AVOGY INC

High power gallium nitride electronics using miscut substrates

BOUR DAVID P

Selective decomposition of nitride semiconductors to enhance LED light extraction

PALO ALTO RES CT INC

Laser diode with high indium active layer and lattice matched cladding layer

PHILIPS LUMILEDS LIGHTING CO

Light emitting diodes with graded composition active regions

LUMILEDS LIGHTING LLC

Light emitting diodes with graded composition active regions

CORNELL RES FOUNDATION INC

High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser

AVAGO TECHNOLOGIES GENERAL IP

Optical isolator utilizing a micro-resonator

DISNEY DONALD R

Method and system for fabricating floating guard rings in GaN materials