Inventor
TAN MICHAEL R T
US48 patents
⚠️ This page may combine multiple inventors who share the name “TAN MICHAEL R T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AGILENT TECHNOLOGIES INC
17 patentsUS6483862B1Nov 19, 2002
System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
AGILENT TECHNOLOGIES INC64 citations96
US6252896B1Jun 26, 2001
Long-Wavelength VCSEL using buried bragg reflectors
AGILENT TECHNOLOGIES INC84 citations94
US6765238B2Jul 20, 2004
Material systems for semiconductor tunnel-junction structures
AGILENT TECHNOLOGIES INC48 citations93
US6756325B2Jun 29, 2004
Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
AGILENT TECHNOLOGIES INC37 citations92
US6188711B1Feb 13, 2001
Polarization-controlled VCSELs using externally applied uniaxial stress
AGILENT TECHNOLOGIES INC19 citations92
US7072531B2Jul 4, 2006
Gain-assisted electroabsorption modulators
AGILENT TECHNOLOGIES INC24 citations91
US6764926B2Jul 20, 2004
Method for obtaining high quality InGaAsN semiconductor devices
AGILENT TECHNOLOGIES INC25 citations91
US6711195B2Mar 23, 2004
Long-wavelength photonic device with GaAsSb quantum-well layer
AGILENT TECHNOLOGIES INC22 citations91
US6730944B1May 4, 2004
InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP
AGILENT TECHNOLOGIES INC13 citations83
US6647050B2Nov 11, 2003
Flip-chip assembly for optically-pumped lasers
AGILENT TECHNOLOGIES INC16 citations80
US6813295B2Nov 2, 2004
Asymmetric InGaAsN vertical cavity surface emitting lasers
AGILENT TECHNOLOGIES INC7 citations74
US7034331B2Apr 25, 2006
Material systems for semiconductor tunnel-junction structures
AGILENT TECHNOLOGIES INC9 citations73
US6553051B1Apr 22, 2003
System for optically pumping a long wavelength laser using a short wavelength laser
AGILENT TECHNOLOGIES INC8 citations73
US6931044B2Aug 16, 2005
Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
AGILENT TECHNOLOGIES INC5 citations63
US6650684B1Nov 18, 2003
Surface emitting laser diodes with enhanced higher order spatial modes and/or filamentation
AGILENT TECHNOLOGIES INC4 citations62
US6878970B2Apr 12, 2005
Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells
AGILENT TECHNOLOGIES INC6 citations61
US7577172B2Aug 18, 2009
Active region of a light emitting device optimized for increased modulation speed operation
AGILENT TECHNOLOGIES INC1 citations52
HEWLETT PACKARD CO
14 patentsUS5896408AApr 20, 1999
Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets
HEWLETT PACKARD CO176 citations99
US5727014AMar 10, 1998
Vertical-cavity surface-emitting laser generating light with a defined direction of polarization
HEWLETT PACKARD CO118 citations98
US5892784AApr 6, 1999
N-drive p-common surface emitting laser fabricated on n+ substrate
HEWLETT PACKARD CO85 citations96
US5729563AMar 17, 1998
Method and apparatus for optically and thermally isolating surface emitting laser diodes
HEWLETT PACKARD CO59 citations96
US5892787AApr 6, 1999
N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
HEWLETT PACKARD CO63 citations95
US5809050ASep 15, 1998
Integrated controlled intensity laser-based light source using diffraction, scattering and transmission
HEWLETT PACKARD CO76 citations95
US5359447AOct 25, 1994
Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes
HEWLETT PACKARD CO97 citations95
US5867516AFeb 2, 1999
Vertical cavity surface emitting laser with reduced turn-on jitter and increased single-mode output
HEWLETT PACKARD CO24 citations93
US5838708ANov 17, 1998
Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser
HEWLETT PACKARD CO44 citations93
US5266503ANov 30, 1993
Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth
HEWLETT PACKARD CO34 citations93
US5771254AJun 23, 1998
Integrated controlled intensity laser-based light source
HEWLETT PACKARD CO47 citations92
US5761229AJun 2, 1998
Integrated controlled intensity laser-based light source
HEWLETT PACKARD CO42 citations92
US5596595AJan 21, 1997
Current and heat spreading transparent layers for surface-emitting lasers
HEWLETT PACKARD CO33 citations92
US5045498ASep 3, 1991
Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface
HEWLETT PACKARD CO10 citations74
AVAGO TECHNOLOGIES GENERAL IP
3 patentsUS7544945B2Jun 9, 2009
Vertical cavity surface emitting laser (VCSEL) array laser scanner
AVAGO TECHNOLOGIES GENERAL IP267 citations99
US7215848B2May 8, 2007
Optical isolator utilizing a micro-resonator
AVAGO TECHNOLOGIES GENERAL IP36 citations89
US7276390B2Oct 2, 2007
Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same
AVAGO TECHNOLOGIES GENERAL IP0 citations46
TAN MICHAEL R T
3 patentsAVAGO TECHNOLOGIES FIBER IP PT
2 patentsAVAGO TECH ECBU IP SG PTE LTD
2 patentsAVAGO TECH FIBER IP SG PTE LTD
2 patentsUS7443561B2Oct 28, 2008
Deep quantum well electro-absorption modulator
AVAGO TECH FIBER IP SG PTE LTD5 citations63
US7269196B2Sep 11, 2007
Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof
AVAGO TECH FIBER IP SG PTE LTD5 citations63