Inventor
SEO YOUNGHUN
KR17 patents
Patents
17 patentsUS9202531B2Dec 1, 2015
Sensor amplifier, memory device comprising same, and related method of operation
SAMSUNG ELECTRONICS CO LTD44 citations93
US11024365B1Jun 1, 2021
Time interleaved sampling of sense amplifier circuits, memory devices and methods of operating memory devices
SAMSUNG ELECTRONICS CO LTD47 citations91
US10497428B2Dec 3, 2019
Bit line sense amplifier, semiconductor memory device and multi bit data sensing method thereof
SAMSUNG ELECTRONICS CO LTD12 citations79
US10305457B2May 28, 2019
Voltage trimming circuit and integrated circuit including the voltage trimming circuit
SAMSUNG ELECTRONICS CO LTD2 citations71
US10956260B2Mar 23, 2021
Semiconductor memory devices, and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD6 citations64
US12424269B2Sep 23, 2025
Semiconductor memory device capable of adaptively controlling bias and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11501824B2Nov 15, 2022
Volatile memory device and data sensing method thereof
SAMSUNG ELECTRONICS CO LTD1 citations60
US12573434B2Mar 10, 2026
Memory devices performing offset compensating operation
SAMSUNG ELECTRONICS CO LTD0 citations52
US12360675B2Jul 15, 2025
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US11501823B2Nov 15, 2022
Semiconductor memory devices including sense amplifier adjusted based on error information
SAMSUNG ELECTRONICS CO LTD0 citations50
US12531109B2Jan 20, 2026
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12518817B2Jan 6, 2026
Memory devices having sense amplifiers therein that support offset compensation and methods of operating same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12051461B2Jul 30, 2024
Bit line sense amplifier and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12495546B2Dec 9, 2025
Semiconductor memory device having segmented cell bit line
SAMSUNG ELECTRONICS CO LTD0 citations45
US12469543B2Nov 11, 2025
Memory core circuits having cell-on-periphery structures and memory devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US12567453B2Mar 3, 2026
Semiconductor memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations43
US12499930B2Dec 16, 2025
Sense amplifier, operating method thereof, and volatile memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations41