Inventor
HOECHBAUER TOBIAS
AT3 patents
Patents
3 patentsUS11887894B2Jan 30, 2024
Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers
INFINEON TECHNOLOGIES AG1 citations60
US11721547B2Aug 8, 2023
Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
INFINEON TECHNOLOGIES AG1 citations59
US12249504B2Mar 11, 2025
Manufacturing and reuse of semiconductor substrates
INFINEON TECHNOLOGIES AG0 citations47