Inventor
LAI HSIN-YU
TW6 patents
⚠️ This page may combine multiple inventors who share the name “LAI HSIN-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS12588271B2Mar 24, 2026
Multi-layer electrode to improve performance of ferroelectric memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12238934B2Feb 25, 2025
Method of fabricating semiconductor device comprising ferroelectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11916127B2Feb 27, 2024
Multi-layer electrode to improve performance of ferroelectric memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12230670B2Feb 18, 2025
Stacked capacitor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US12136517B2Nov 5, 2024
Capacitor structure and manufacturing method and operating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48