Inventor

CHA TAE-HO

KR19 patents

⚠️ This page may combine multiple inventors who share the name “CHA TAE-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHA TAE-HO

SAMSUNG ELECTRONICS CO LTD

FinFET devices having active patterns and gate spacers on field insulating layers

Methods for fabricating improved gate dielectrics

Gate structures in semiconductor devices

Gate structure, and semiconductor device having a gate structure

Methods for fabricating improved gate dielectrics

Semiconductor devices and methods of fabricating the same

Semiconductor device and method of fabricating the same

Methods for fabricating finFET devices having gate spacers on field insulating layers

Semiconductor memory device and method of manufacturing the same

Method for fabricating semiconductor device

HYNIX SEMICONDUCTOR INC

Method of manufacturing semiconductor devices with titanium aluminum nitride work function

Method of forming dual-metal gates in semiconductor device

Method of manufacturing a transistor in a semiconductor device

Method for fabricating a dual metal gate for a semiconductor device

Method for fabricating semiconductor devices having dual gate oxide layer

Method for fabricating semiconductor devices having dual gate oxide layers

BAEK JONG-MIN

Method of fabricating semiconductor device having buried wiring

HYUNDAI ELECTRONICS IND

Method of forming a gate electrode in a semiconductor device

CHA TAE-HO

Methods of forming a gate structure