Inventor
SEONG GEUM-JUNG
KR25 patents
⚠️ This page may combine multiple inventors who share the name “SEONG GEUM-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS10896957B2Jan 19, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD9 citations84
US10395990B2Aug 27, 2019
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US10319841B2Jun 11, 2019
Integrated circuit device including asymmetrical fin field-effect transistor
SAMSUNG ELECTRONICS CO LTD7 citations83
US9627542B2Apr 18, 2017
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations83
US9876013B1Jan 23, 2018
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD14 citations82
US11901359B2Feb 13, 2024
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11189615B2Nov 30, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11621196B2Apr 4, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11037829B2Jun 15, 2021
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10840139B2Nov 17, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US10002967B2Jun 19, 2018
Semiconductor devices having fin-shaped patterns with inflection points
SAMSUNG ELECTRONICS CO LTD2 citations71
US7759263B2Jul 20, 2010
Methods for fabricating improved gate dielectrics
SAMSUNG ELECTRONICS CO LTD5 citations63
US12125750B2Oct 22, 2024
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12100735B2Sep 24, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations61
US11600698B2Mar 7, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US7972941B2Jul 5, 2011
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7879737B2Feb 1, 2011
Methods for fabricating improved gate dielectrics
SAMSUNG ELECTRONICS CO LTD0 citations52
US7518214B2Apr 14, 2009
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10573729B2Feb 25, 2020
Integrated circuit device including asymmetrical fin field-effect transistor
SAMSUNG ELECTRONICS CO LTD0 citations51
US7585787B2Sep 8, 2009
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US10714618B2Jul 14, 2020
Finfet with various shaped source/drain regions
SAMSUNG ELECTRONICS CO LTD0 citations36