Inventor
GUTMANN ALOIS
US38 patents
⚠️ This page may combine multiple inventors who share the name “GUTMANN ALOIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
25 patentsUS7298009B2Nov 20, 2007
Semiconductor method and device with mixed orientation substrate
INFINEON TECHNOLOGIES AG588 citations99
US7687925B2Mar 30, 2010
Alignment marks for polarized light lithography and method for use thereof
INFINEON TECHNOLOGIES AG19 citations92
US6379869B1Apr 30, 2002
Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
INFINEON TECHNOLOGIES AG36 citations92
US6420101B1Jul 16, 2002
Method of reducing post-development defects in and around openings formed in photoresist by use of non-patterned exposure
INFINEON TECHNOLOGIES AG15 citations84
US7947431B2May 24, 2011
Lithography masks and methods of manufacture thereof
INFINEON TECHNOLOGIES AG7 citations83
US8361879B2Jan 29, 2013
Stress-inducing structures, methods, and materials
INFINEON TECHNOLOGIES AG5 citations82
US6670646B2Dec 30, 2003
Mask and method for patterning a semiconductor wafer
INFINEON TECHNOLOGIES AG8 citations74
US6372408B1Apr 16, 2002
Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles
INFINEON TECHNOLOGIES AG10 citations74
US7800182B2Sep 21, 2010
Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same
INFINEON TECHNOLOGIES AG6 citations73
US7629225B2Dec 8, 2009
Methods of manufacturing semiconductor devices and structures thereof
INFINEON TECHNOLOGIES AG6 citations72
US7678622B2Mar 16, 2010
Semiconductor method and device with mixed orientation substrate
INFINEON TECHNOLOGIES AG2 citations63
US8349528B2Jan 8, 2013
Semiconductor devices and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG2 citations62
US7799486B2Sep 21, 2010
Lithography masks and methods of manufacture thereof
INFINEON TECHNOLOGIES AG2 citations62
US7795107B2Sep 14, 2010
Method for forming isolation structures
INFINEON TECHNOLOGIES AG3 citations62
US7674350B2Mar 9, 2010
Feature dimension control in a manufacturing process
INFINEON TECHNOLOGIES AG2 citations62
US7666800B2Feb 23, 2010
Feature patterning methods
INFINEON TECHNOLOGIES AG2 citations62
US7615840B2Nov 10, 2009
Device performance improvement using flowfill as material for isolation structures
INFINEON TECHNOLOGIES AG2 citations62
US8907444B2Dec 9, 2014
Stress-inducing structures, methods, and materials
INFINEON TECHNOLOGIES AG2 citations61
US8013364B2Sep 6, 2011
Semiconductor devices and structures thereof
INFINEON TECHNOLOGIES AG2 citations61
US7030506B2Apr 18, 2006
Mask and method for using the mask in lithographic processing
INFINEON TECHNOLOGIES AG2 citations60
US8377800B2Feb 19, 2013
Alignment marks for polarized light lithography and method for use thereof
INFINEON TECHNOLOGIES AG0 citations52
US8007985B2Aug 30, 2011
Semiconductor devices and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG0 citations52
US7947606B2May 24, 2011
Methods of forming conductive features and structures thereof
INFINEON TECHNOLOGIES AG0 citations52
US7820518B2Oct 26, 2010
Transistor fabrication methods and structures thereof
INFINEON TECHNOLOGIES AG0 citations52
US9373717B2Jun 21, 2016
Stress-inducing structures, methods, and materials
INFINEON TECHNOLOGIES AG0 citations50