Inventor
LUYKEN RICHARD JOHANNES
DE25 patents
⚠️ This page may combine multiple inventors who share the name “LUYKEN RICHARD JOHANNES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
17 patentsUS6707098B2Mar 16, 2004
Electronic device and method for fabricating an electronic device
INFINEON TECHNOLOGIES AG295 citations99
US7208794B2Apr 24, 2007
High-density NROM-FINFET
INFINEON TECHNOLOGIES AG93 citations98
US6798000B2Sep 28, 2004
Field effect transistor
INFINEON TECHNOLOGIES AG251 citations98
US6740910B2May 25, 2004
Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor
INFINEON TECHNOLOGIES AG127 citations97
US7719059B2May 18, 2010
Fin field effect transistor arrangement and method for producing a fin field effect transistor arrangement
INFINEON TECHNOLOGIES AG23 citations92
US7075148B2Jul 11, 2006
Semiconductor memory with vertical memory transistors in a cell array arrangement with 1-2F2 cells
INFINEON TECHNOLOGIES AG20 citations92
US6977413B2Dec 20, 2005
Bar-type field effect transistor and method for the production thereof
INFINEON TECHNOLOGIES AG15 citations84
US7442609B2Oct 28, 2008
Method of manufacturing a transistor and a method of forming a memory device with isolation trenches
INFINEON TECHNOLOGIES AG10 citations83
US6882007B2Apr 19, 2005
SRAM memory cell, memory cell arrangement and method for fabricating a memory cell arrangement
INFINEON TECHNOLOGIES AG9 citations74
US7189988B2Mar 13, 2007
Molecular electronics arrangement and method for producing a molecular electronics arrangement
INFINEON TECHNOLOGIES AG7 citations73
US7560351B2Jul 14, 2009
Integrated circuit arrangement with low-resistance contacts and method for production thereof
INFINEON TECHNOLOGIES AG6 citations63
US7265413B2Sep 4, 2007
Semiconductor memory with vertical memory transistors and method for fabricating it
INFINEON TECHNOLOGIES AG4 citations63
US7195978B2Mar 27, 2007
Method for the production of a memory cell, memory cell and memory cell arrangement
INFINEON TECHNOLOGIES AG4 citations63
US6730930B2May 4, 2004
Memory element and method for fabricating a memory element
INFINEON TECHNOLOGIES AG2 citations63
US7312126B2Dec 25, 2007
Process for producing a layer arrangement, and layer arrangement for use as a dual gate field-effect transistor
INFINEON TECHNOLOGIES AG4 citations57
US7307865B2Dec 11, 2007
Integrated read-only memory, method for operating said read-only memory and corresponding production method
INFINEON TECHNOLOGIES AG0 citations49
US7611928B2Nov 3, 2009
Method for producing a substrate
INFINEON TECHNOLOGIES AG1 citations48
QIMONDA AG
7 patentsUS7638869B2Dec 29, 2009
Semiconductor device
QIMONDA AG76 citations95
US7721130B2May 18, 2010
Apparatus and method for switching an apparatus to a power saving mode
QIMONDA AG8 citations82
US7829892B2Nov 9, 2010
Integrated circuit including a gate electrode
QIMONDA AG2 citations63
US7598543B2Oct 6, 2009
Semiconductor memory component with body region of memory cell having a depression and a graded dopant concentration
QIMONDA AG2 citations62
US7936201B2May 3, 2011
Apparatus and method for providing a signal for transmission via a signal line
QIMONDA AG0 citations50
US7605032B2Oct 20, 2009
Method for producing a trench transistor and trench transistor
QIMONDA AG0 citations41
US7405591B2Jul 29, 2008
Concept for interfacing a first circuit requiring a first supply voltage and a second supply circuit requiring a second supply voltage
QIMONDA AG0 citations40