Inventor
AKARVARDAR MURAT K
US7 patents
Patents
7 patentsUS10217846B1Feb 26, 2019
Vertical field effect transistor formation with critical dimension control
GLOBALFOUNDRIES INC21 citations94
US9385233B2Jul 5, 2016
Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide
GLOBALFOUNDRIES INC10 citations83
US9293587B2Mar 22, 2016
Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (FinFET) device
GLOBALFOUNDRIES INC7 citations83
US9287130B1Mar 15, 2016
Method for single fin cuts using selective ion implants
GLOBALFOUNDRIES INC12 citations83
US8963259B2Feb 24, 2015
Device isolation in finFET CMOS
GLOBALFOUNDRIES INC5 citations83
US9842897B2Dec 12, 2017
Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide
GLOBALFOUNDRIES INC2 citations72
US9240342B2Jan 19, 2016
Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process
GLOBALFOUNDRIES INC2 citations62