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Inventor
BOLKHOVSKY VLADIMIR N
US
2 patents
Patents
2 patents
US7696049B2
Apr 13, 2010
Method to manufacture LDMOS transistors with improved threshold voltage control
TEXAS INSTRUMENTS INC
8 citations
82
US7141455B2
Nov 28, 2006
Method to manufacture LDMOS transistors with improved threshold voltage control
TEXAS INSTRUMENTS INC
11 citations
82