Inventor

CHANG HSUN

TW5 patents

⚠️ This page may combine multiple inventors who share the name “CHANG HSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

3 patents

US7838887B2Nov 23, 2010

Source/drain carbon implant and RTA anneal, pre-SiGe deposition

TAIWAN SEMICONDUCTOR MFG26 citations91

US7741699B2Jun 22, 2010

Semiconductor device having ultra-shallow and highly activated source/drain extensions

TAIWAN SEMICONDUCTOR MFG3 citations62

US7494857B2Feb 24, 2009

Advanced activation approach for MOS devices

TAIWAN SEMICONDUCTOR MFG5 citations62

WOON WEI-YEN

1 patent

US8404546B2Mar 26, 2013

Source/drain carbon implant and RTA anneal, pre-SiGe deposition

WOON WEI-YEN35 citations90

KUO KEH-CHIANG

1 patent

US8273633B2Sep 25, 2012

Method of enhancing dopant activation without suffering additional dopant diffusion

KUO KEH-CHIANG0 citations31