Inventor
TAHARA SHIGERU
JP38 patents
⚠️ This page may combine multiple inventors who share the name “TAHARA SHIGERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
26 patentsUS8349085B2Jan 8, 2013
Substrate processing apparatus
TOKYO ELECTRON LTD59 citations96
US7882800B2Feb 8, 2011
Ring mechanism, and plasma processing device using the ring mechanism
TOKYO ELECTRON LTD31 citations92
US7674393B2Mar 9, 2010
Etching method and apparatus
TOKYO ELECTRON LTD15 citations92
US10229815B2Mar 12, 2019
Plasma etching apparatus and method
TOKYO ELECTRON LTD6 citations83
US8986493B2Mar 24, 2015
Etching apparatus
TOKYO ELECTRON LTD5 citations83
US8361275B2Jan 29, 2013
Etching apparatus
TOKYO ELECTRON LTD14 citations83
US10074800B2Sep 11, 2018
Method for etching magnetic layer including isopropyl alcohol and carbon dioxide
TOKYO ELECTRON LTD2 citations73
US10861678B2Dec 8, 2020
Plasma etching apparatus and method
TOKYO ELECTRON LTD4 citations72
US9859102B2Jan 2, 2018
Method of etching porous film
TOKYO ELECTRON LTD5 citations72
US10770308B2Sep 8, 2020
Etching method
TOKYO ELECTRON LTD4 citations71
US12068171B2Aug 20, 2024
Method for etching oxide semiconductor film and plasma processing apparatus
TOKYO ELECTRON LTD0 citations62
US11616194B2Mar 28, 2023
Etching method
TOKYO ELECTRON LTD0 citations62
US7892986B2Feb 22, 2011
Ashing method and apparatus therefor
TOKYO ELECTRON LTD2 citations62
US11404283B2Aug 2, 2022
Etching method
TOKYO ELECTRON LTD0 citations61
US8026150B2Sep 27, 2011
Semiconductor device manufacturing method and storage medium
TOKYO ELECTRON LTD3 citations61
US12131914B2Oct 29, 2024
Selective etching with fluorine, oxygen and noble gas containing plasmas
TOKYO ELECTRON LTD0 citations58
US11120999B2Sep 14, 2021
Plasma etching method
TOKYO ELECTRON LTD0 citations58
US12249515B2Mar 11, 2025
Etching method and etching apparatus
TOKYO ELECTRON LTD0 citations57
US11361945B2Jun 14, 2022
Plasma processing apparatus, processing system, and method of etching porous film
TOKYO ELECTRON LTD0 citations52
US9786473B2Oct 10, 2017
Method of processing workpiece
TOKYO ELECTRON LTD1 citations52
US9177816B2Nov 3, 2015
Deposit removal method
TOKYO ELECTRON LTD1 citations52
US10236162B2Mar 19, 2019
Method of etching porous film
TOKYO ELECTRON LTD0 citations51
US7964511B2Jun 21, 2011
Plasma ashing method
TOKYO ELECTRON LTD1 citations50
US10626498B2Apr 21, 2020
Method of processing target object to be processed
TOKYO ELECTRON LTD0 citations42
US10825688B2Nov 3, 2020
Method for etching copper layer
TOKYO ELECTRON LTD0 citations39
US10319905B2Jun 11, 2019
Method and system for performing post-etch annealing of a workpiece
TOKYO ELECTRON LTD0 citations34
TAHARA SHIGERU
4 patentsUS8492287B2Jul 23, 2013
Substrate processing method
TAHARA SHIGERU7 citations82
US9126229B2Sep 8, 2015
Deposit removal method
TAHARA SHIGERU3 citations61
US9177781B2Nov 3, 2015
Plasma processing method and manufacturing method of semiconductor device
TAHARA SHIGERU1 citations51
US8404596B2Mar 26, 2013
Plasma ashing method
TAHARA SHIGERU0 citations48