Inventor
OHTSUKA NOBUYUKI
JP33 patents
⚠️ This page may combine multiple inventors who share the name “OHTSUKA NOBUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
19 patentsUS6242808B1Jun 5, 2001
Semiconductor device with copper wiring and semiconductor device manufacturing method
FUJITSU LTD87 citations98
US5484664AJan 16, 1996
Hetero-epitaxially grown compound semiconductor substrate
FUJITSU LTD294 citations98
US5300186AApr 5, 1994
Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
FUJITSU LTD132 citations98
US5270247ADec 14, 1993
Atomic layer epitaxy of compound semiconductor
FUJITSU LTD206 citations98
US5166092ANov 24, 1992
Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
FUJITSU LTD181 citations98
US5130269AJul 14, 1992
Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
FUJITSU LTD108 citations97
US6750541B2Jun 15, 2004
Semiconductor device
FUJITSU LTD47 citations96
US4861417AAug 29, 1989
Method of growing group III-V compound semiconductor epitaxial layer
FUJITSU LTD88 citations95
US7413977B2Aug 19, 2008
Method of manufacturing semiconductor device suitable for forming wiring using damascene method
FUJITSU LTD17 citations92
US5608229AMar 4, 1997
Quantum box semiconductor device
FUJITSU LTD40 citations92
US7199044B2Apr 3, 2007
Method for manufacturing semiconductor device
FUJITSU LTD14 citations84
US7846833B2Dec 7, 2010
Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device
FUJITSU LTD7 citations74
US6992005B2Jan 31, 2006
Semiconductor device and method of manufacturing the same
FUJITSU LTD9 citations74
US6746957B2Jun 8, 2004
Manufacture of semiconductor device with copper wiring
FUJITSU LTD7 citations74
US5817538AOct 6, 1998
Method of making quantum box semiconductor device
FUJITSU LTD12 citations73
US6159854ADec 12, 2000
Process of growing conductive layer from gas phase
FUJITSU LTD15 citations72
US7713869B2May 11, 2010
Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device
FUJITSU LTD5 citations63
US5296088AMar 22, 1994
Compound semiconductor crystal growing method
FUJITSU LTD6 citations62
US6900542B2May 31, 2005
Semiconductor device having increased adhesion between a barrier layer for preventing copper diffusion and a conductive layer, and method of manufacturing the same
FUJITSU LTD0 citations41
FUJITSU SEMICONDUCTOR LTD
4 patentsUS7795141B2Sep 14, 2010
Method of manufacturing semiconductor device suitable for forming wiring using damascene method
FUJITSU SEMICONDUCTOR LTD5 citations74
US7928476B2Apr 19, 2011
Semiconductor device and method of manufacturing the same
FUJITSU SEMICONDUCTOR LTD3 citations63
US7935624B2May 3, 2011
Fabrication method of semiconductor device having a barrier layer containing Mn
FUJITSU SEMICONDUCTOR LTD2 citations62
US8889505B2Nov 18, 2014
Method for manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations52
HANEDA MASAKI
3 patentsUS8168532B2May 1, 2012
Method of manufacturing a multilayer interconnection structure in a semiconductor device
HANEDA MASAKI21 citations90
US9559058B2Jan 31, 2017
Semiconductor device and method for manufacturing the same
HANEDA MASAKI0 citations50
US8067836B2Nov 29, 2011
Semiconductor device with reduced increase in copper film resistance
HANEDA MASAKI1 citations50
FUJITSU MICROELECTRONICS LTD
2 patentsUS7507666B2Mar 24, 2009
Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition
FUJITSU MICROELECTRONICS LTD49 citations92
US7507659B2Mar 24, 2009
Fabrication process of a semiconductor device
FUJITSU MICROELECTRONICS LTD23 citations92