Inventor

FAURIE JEAN-PIERRE

FR21 patents

⚠️ This page may combine multiple inventors who share the name “FAURIE JEAN-PIERRE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FAURIE JEAN-PIERRE

LUMILOG

Process for producing an epitaxial layer of gallium nitride

Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density

Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof

Process for producing an epitalixal layer of galium nitride

FAURIE JEAN-PIERRE

Group III-V substrate material with particular crystallographic features

Method of forming a freestanding semiconductor wafer

Group III-V substrate material with particular crystallographic features and methods of making

Semiconductor substrate and method of forming

BEAUMONT BERNARD

Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof

Process for growth of low dislocation density GaN

Semiconductor substrate and method of manufacturing

SAINT GOBAIN CRISTAUX ET DETECTEURS

Process for producing an epitaxial layer of galium nitride

Group III-V substrate material with thin buffer layer and methods of making

Semiconductor substrate and method of forming

SAINT GOBAIN LUMILOG

Semiconductor material including different crystalline orientation zones and related production process

Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride

EPIR TECHNOLOGIES INC

Multispectral monolithic infrared focal plane array detectors

FAURIE JEAN PIERRE

Method of forming semiconductor substrate

AUJOL ERIC

Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate

SAINT-GOBAIN LUMILOG

Semiconductor material including different crystalline orientation zones and related production process

IVWORKS CO LTD

N-CO-doped semiconductor substrate