Inventor
BEAUMONT BERNARD
FR25 patents
⚠️ This page may combine multiple inventors who share the name “BEAUMONT BERNARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LUMILOG
6 patentsUS7118929B2Oct 10, 2006
Process for producing an epitaxial layer of gallium nitride
LUMILOG53 citations94
US6802902B2Oct 12, 2004
Process for producing an epitaxial layer of gallium nitride
LUMILOG71 citations94
US7455729B2Nov 25, 2008
Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
LUMILOG9 citations82
US7445673B2Nov 4, 2008
Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
LUMILOG18 citations82
US7488385B2Feb 10, 2009
Method for epitaxial growth of a gallium nitride film separated from its substrate
LUMILOG13 citations81
US7560296B2Jul 14, 2009
Process for producing an epitalixal layer of galium nitride
LUMILOG5 citations71
FAURIE JEAN-PIERRE
4 patentsUS8916456B2Dec 23, 2014
Group III-V substrate material with particular crystallographic features
FAURIE JEAN-PIERRE2 citations61
US9318314B2Apr 19, 2016
Method of forming a freestanding semiconductor wafer
FAURIE JEAN-PIERRE0 citations50
US9312129B2Apr 12, 2016
Group III-V substrate material with particular crystallographic features and methods of making
FAURIE JEAN-PIERRE1 citations50
US8921210B2Dec 30, 2014
Semiconductor substrate and method of forming
FAURIE JEAN-PIERRE0 citations50
BEAUMONT BERNARD
3 patentsUS9012306B2Apr 21, 2015
Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
BEAUMONT BERNARD9 citations82
US8283239B2Oct 9, 2012
Process for growth of low dislocation density GaN
BEAUMONT BERNARD8 citations78
US9209018B2Dec 8, 2015
Semiconductor substrate and method of manufacturing
BEAUMONT BERNARD2 citations60
SAINT GOBAIN CRISTAUX ET DETECTEURS
3 patentsUS8030101B2Oct 4, 2011
Process for producing an epitaxial layer of galium nitride
SAINT GOBAIN CRISTAUX ET DETECTEURS2 citations61
US9130120B2Sep 8, 2015
Group III-V substrate material with thin buffer layer and methods of making
SAINT GOBAIN CRISTAUX ET DETECTEURS0 citations51
US9064685B2Jun 23, 2015
Semiconductor substrate and method of forming
SAINT GOBAIN CRISTAUX ET DETECTEURS0 citations51
SAINT GOBAIN LUMILOG
3 patentsUS10497833B2Dec 3, 2019
Semiconductor material including different crystalline orientation zones and related production process
SAINT GOBAIN LUMILOG0 citations49
US10604864B2Mar 31, 2020
Method for the production of wafers of nitride of element 13, having a non-zero truncation angle
SAINT GOBAIN LUMILOG0 citations42
US10181399B2Jan 15, 2019
Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride
SAINT GOBAIN LUMILOG0 citations39