Inventor

GEHRKE THOMAS

US71 patents

⚠️ This page may combine multiple inventors who share the name “GEHRKE THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GEHRKE THOMAS

UNIV NORTH CAROLINA STATE

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

INT RECTIFIER CORP

Gallium nitride semiconductor structures with compositionally-graded transition layer

Gallium nitride semiconductor structures with compositionally-graded transition layer

Gallium nitride devices with aluminum nitride intermediate layer

Gallium nitride devices with gallium nitride alloy intermediate layer

Gallium nitride devices with aluminum nitride alloy intermediate layer

Gallium nitride semiconductor structures with compositionally-graded transition layer

MICRON TECHNOLOGY INC

Conductive structures, wordlines and transistors

Semiconductor growth substrates and associated systems and methods for die singulation

Light emitting diodes with n-polarity and associated methods of manufacturing

Light emitting diodes with n-polarity and associated methods of manufacturing

Light emitting diodes and associated methods of manufacturing

INFINEON TECHNOLOGIES AMERICAS CORP

Semiconductor material having a compositionally-graded transition layer

Semiconductor structure with compositionally-graded transition layer

III-nitride based semiconductor structure

Gallium nitride devices with discontinuously graded transition layer

NITRONEX CORP

Gallium nitride materials and methods

Gallium nitride materials and methods

Gallium nitride materials including thermally conductive regions

CREE INC

Method of manufacturing gallium nitride based high-electron mobility devices

Gallium nitride based high-electron mobility devices

Method of manufacturing an adaptive AIGaN buffer layer

BASCERI CEM

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

Solid state lighting dies with quantum emitters and associated methods of manufacturing

NOERH CAROLINA STATE UNIVERSIT

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

SCHUBERT MARTIN F

Engineered substrates for semiconductor devices and associated systems and methods

WEEKS JR T WARREN

Gallium nitride materials and methods

WATKINS CHARLES M

Method for forming a light conversion material

FANG XIAOLONG

Semiconductor growth substrates and associated systems and methods for die singulation

SILLS SCOTT

Solid state lighting devices with cellular arrays and associated methods of manufacturing