Inventor
CHANG SHIH-CHIEH
TW172 patents
⚠️ This page may combine multiple inventors who share the name “CHANG SHIH-CHIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
39 patentsUS10510871B1Dec 17, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD357 citations99
US10522359B2Dec 31, 2019
FinFET device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10164048B1Dec 25, 2018
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US10510889B2Dec 17, 2019
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US9450047B1Sep 20, 2016
Semiconductor structure having enlarged regrowth regions and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations91
US10680106B2Jun 9, 2020
Method of forming source/drain epitaxial stacks
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11094826B2Aug 17, 2021
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10991826B2Apr 27, 2021
Semiconductor device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10879126B2Dec 29, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10720530B2Jul 21, 2020
Semiconductor device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10651287B2May 12, 2020
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10535736B2Jan 14, 2020
Fully strained channel
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10515951B2Dec 24, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10269646B2Apr 23, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10164098B2Dec 25, 2018
Method of manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10164100B2Dec 25, 2018
Formation method and structure semiconductor device with source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9899273B1Feb 20, 2018
Semiconductor structure with dopants diffuse protection and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9847334B1Dec 19, 2017
Structure and formation method of semiconductor device with channel layer
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations84
US9870926B1Jan 16, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US9620503B1Apr 11, 2017
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9543387B2Jan 10, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations83
US11769817B2Sep 26, 2023
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569383B2Jan 31, 2023
Method of forming source/drain epitaxial stacks
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11545399B2Jan 3, 2023
FinFET EPI channels having different heights on a stepped substrate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522086B2Dec 6, 2022
Semiconductor device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11476349B2Oct 18, 2022
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11404561B2Aug 2, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11233123B2Jan 25, 2022
Fully strained channel
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11222963B2Jan 11, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11011433B2May 18, 2021
NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879396B2Dec 29, 2020
Semiconductor device with source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867799B2Dec 15, 2020
FinFET device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10868183B2Dec 15, 2020
FinFET device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10840358B2Nov 17, 2020
Method for manufacturing semiconductor structure with source/drain structure having modified shape
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10672886B2Jun 2, 2020
Structure and method for high-k metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10629496B2Apr 21, 2020
Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10490661B2Nov 26, 2019
Dopant concentration boost in epitaxially formed material
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10468530B2Nov 5, 2019
Semiconductor structure with source/drain multi-layer structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10026840B2Jul 17, 2018
Structure of semiconductor device with source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
CHANG SHIH-CHIEH
4 patentsUS7278751B2Oct 9, 2007
Screwdriver with illumination
CHANG SHIH-CHIEH41 citations87
US8469644B2Jun 25, 2013
Stem fastening structure
CHANG SHIH-CHIEH13 citations84
US8247322B2Aug 21, 2012
Via/contact and damascene structures and manufacturing methods thereof
CHANG SHIH-CHIEH14 citations84
US7737056B2Jun 15, 2010
Moisture-wicking and fast drying cloth
CHANG SHIH-CHIEH13 citations84
LUNG CHIAO-LING
1 patentCHANG TING-CHANG
1 patentIND TECH RES INST
1 patentNIAN JUN-NAN
1 patentTAIWAN SEMICONDUCTOR MFG
1 patentCHANG SHIH CHIEH
1 patentDELTA ELECTRONICS INC
1 patentShowing the top 50 of 172 patents by PatentIndex Score.