P

Inventor

CHANG SHIH-CHIEH

TW172 patents
⚠️ This page may combine multiple inventors who share the name “CHANG SHIH-CHIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

39 patents
US10510871B1Dec 17, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD357 citations99
US10522359B2Dec 31, 2019

FinFET device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10164048B1Dec 25, 2018

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US10510889B2Dec 17, 2019

P-type strained channel in a fin field effect transistor (FinFET) device

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US9450047B1Sep 20, 2016

Semiconductor structure having enlarged regrowth regions and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD22 citations91
US10680106B2Jun 9, 2020

Method of forming source/drain epitaxial stacks

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11094826B2Aug 17, 2021

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10991826B2Apr 27, 2021

Semiconductor device and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10879126B2Dec 29, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10720530B2Jul 21, 2020

Semiconductor device and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10651287B2May 12, 2020

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10535736B2Jan 14, 2020

Fully strained channel

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10515951B2Dec 24, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10269646B2Apr 23, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10164098B2Dec 25, 2018

Method of manufacturing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10164100B2Dec 25, 2018

Formation method and structure semiconductor device with source/drain structures

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9899273B1Feb 20, 2018

Semiconductor structure with dopants diffuse protection and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9847334B1Dec 19, 2017

Structure and formation method of semiconductor device with channel layer

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations84
US9870926B1Jan 16, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US9620503B1Apr 11, 2017

Fin field effect transistor and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9543387B2Jan 10, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations83
US11769817B2Sep 26, 2023

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569383B2Jan 31, 2023

Method of forming source/drain epitaxial stacks

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11545399B2Jan 3, 2023

FinFET EPI channels having different heights on a stepped substrate

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522086B2Dec 6, 2022

Semiconductor device and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11476349B2Oct 18, 2022

FinFET structures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11404561B2Aug 2, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11233123B2Jan 25, 2022

Fully strained channel

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11222963B2Jan 11, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11011433B2May 18, 2021

NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879396B2Dec 29, 2020

Semiconductor device with source/drain structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867799B2Dec 15, 2020

FinFET device and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10868183B2Dec 15, 2020

FinFET device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10840358B2Nov 17, 2020

Method for manufacturing semiconductor structure with source/drain structure having modified shape

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10672886B2Jun 2, 2020

Structure and method for high-k metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10629496B2Apr 21, 2020

Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10490661B2Nov 26, 2019

Dopant concentration boost in epitaxially formed material

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10468530B2Nov 5, 2019

Semiconductor structure with source/drain multi-layer structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10026840B2Jul 17, 2018

Structure of semiconductor device with source/drain structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

CHANG SHIH-CHIEH

4 patents

LUNG CHIAO-LING

1 patent

CHANG TING-CHANG

1 patent

IND TECH RES INST

1 patent

NIAN JUN-NAN

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent

CHANG SHIH CHIEH

1 patent

DELTA ELECTRONICS INC

1 patent

Showing the top 50 of 172 patents by PatentIndex Score.