P

Inventor

PARK JE-MIN

KR83 patents
⚠️ This page may combine multiple inventors who share the name “PARK JE-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

46 patents
US6991980B2Jan 31, 2006

Methods of manufacturing multi-layer integrated circuit capacitor electrodes

SAMSUNG ELECTRONICS CO LTD44 citations96
US6784479B2Aug 31, 2004

Multi-layer integrated circuit capacitor electrodes

SAMSUNG ELECTRONICS CO LTD45 citations96
US8344517B2Jan 1, 2013

Integrated circuit devices including air spacers separating conductive structures and contact plugs and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD35 citations93
US7183603B2Feb 27, 2007

Semiconductor device including square type storage node and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD37 citations93
US7094660B2Aug 22, 2006

Method of manufacturing trench capacitor utilizing stabilizing member to support adjacent storage electrodes

SAMSUNG ELECTRONICS CO LTD22 citations93
US6929999B2Aug 16, 2005

Method of manufacturing semiconductor device with contact body extending in direction of bit line to contact storage node

SAMSUNG ELECTRONICS CO LTD25 citations93
US6852620B2Feb 8, 2005

Semiconductor device with self-aligned junction contact hole and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD17 citations93
US10541302B2Jan 21, 2020

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US10373961B2Aug 6, 2019

Semiconductor device including contact structure

SAMSUNG ELECTRONICS CO LTD10 citations84
US9576902B2Feb 21, 2017

Semiconductor device including landing pad

SAMSUNG ELECTRONICS CO LTD5 citations84
US9318369B2Apr 19, 2016

Patterns of a semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9064731B2Jun 23, 2015

Semiconductor device having landing pads

SAMSUNG ELECTRONICS CO LTD13 citations84
US7977724B2Jul 12, 2011

Capacitor and method of manufacturing the same comprising a stabilizing member

SAMSUNG ELECTRONICS CO LTD9 citations84
US7476584B2Jan 13, 2009

Method of fabricating a semiconductor device with a bit line contact plug

SAMSUNG ELECTRONICS CO LTD10 citations84
US7361591B2Apr 22, 2008

Method of fabricating semiconductor memory device

SAMSUNG ELECTRONICS CO LTD10 citations84
US7126180B2Oct 24, 2006

Semiconductor device including a capacitor having improved structural stability and enhanced capacitance, and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD13 citations84
US7078292B2Jul 18, 2006

Storage node contact forming method and structure for use in semiconductor memory

SAMSUNG ELECTRONICS CO LTD20 citations84
US6977197B2Dec 20, 2005

Semiconductor devices having DRAM cells and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD14 citations84
US6709972B2Mar 23, 2004

Methods for fabricating semiconductor devices by forming grooves across alternating elongated regions

SAMSUNG ELECTRONICS CO LTD17 citations84
US10679997B2Jun 9, 2020

Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations83
US10332831B2Jun 25, 2019

Semiconductor device including a bit line

SAMSUNG ELECTRONICS CO LTD7 citations83
US10886277B2Jan 5, 2021

Methods of manufacturing devices including a buried gate cell and a bit line structure including a thermal oxide buffer pattern

SAMSUNG ELECTRONICS CO LTD7 citations82
US7749834B2Jul 6, 2010

Method of fabricating semiconductor devices having buried contact plugs

SAMSUNG ELECTRONICS CO LTD16 citations79
US7575971B2Aug 18, 2009

Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7300841B2Nov 27, 2007

Capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations74
US7262108B2Aug 28, 2007

Methods for forming resistors for integrated circuit devices

SAMSUNG ELECTRONICS CO LTD7 citations74
US7247537B2Jul 24, 2007

Semiconductor device including an improved capacitor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations74
US7227215B2Jun 5, 2007

Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing same

SAMSUNG ELECTRONICS CO LTD5 citations74
US7176552B2Feb 13, 2007

Semiconductor memory device having a decoupling capacitor

SAMSUNG ELECTRONICS CO LTD8 citations74
US7049203B2May 23, 2006

Semiconductor device having a capacitor and method of fabricating same

SAMSUNG ELECTRONICS CO LTD10 citations74
US6897145B2May 24, 2005

Method for fabricating semiconductor device by forming damascene interconnections

SAMSUNG ELECTRONICS CO LTD6 citations74
US10896967B2Jan 19, 2021

Integrated circuit device including gate spacer structure

SAMSUNG ELECTRONICS CO LTD5 citations73
US9559103B2Jan 31, 2017

Memory device including selectively disposed landing pads expanded over signal line

SAMSUNG ELECTRONICS CO LTD6 citations73
US9437560B2Sep 6, 2016

Semiconductor device including landing pad

SAMSUNG ELECTRONICS CO LTD4 citations73
US9391202B2Jul 12, 2016

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9337151B2May 10, 2016

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9196620B2Nov 24, 2015

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US7446043B2Nov 4, 2008

Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations73
US6927126B2Aug 9, 2005

Method of manufacturing semiconductor device with interconnections and interconnection contacts and a device formed thereby

SAMSUNG ELECTRONICS CO LTD8 citations73
US10998324B2May 4, 2021

Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10332894B2Jun 25, 2019

Semiconductor device comprising work function metal pattern in boundry region and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10325802B2Jun 18, 2019

Method for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations70
US10522550B2Dec 31, 2019

Method for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations69
US10141316B2Nov 27, 2018

Semiconductor device with pillar and background patterns and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations69
US11355349B2Jun 7, 2022

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations63
US7601630B2Oct 13, 2009

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63

PARK JE-MIN

2 patents

KIM DAE-IK

1 patent

KIM EUN-JUNG

1 patent

Showing the top 50 of 83 patents by PatentIndex Score.