Inventor
PARK JE-MIN
KR83 patents
⚠️ This page may combine multiple inventors who share the name “PARK JE-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
46 patentsUS6991980B2Jan 31, 2006
Methods of manufacturing multi-layer integrated circuit capacitor electrodes
SAMSUNG ELECTRONICS CO LTD44 citations96
US6784479B2Aug 31, 2004
Multi-layer integrated circuit capacitor electrodes
SAMSUNG ELECTRONICS CO LTD45 citations96
US8344517B2Jan 1, 2013
Integrated circuit devices including air spacers separating conductive structures and contact plugs and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations93
US7183603B2Feb 27, 2007
Semiconductor device including square type storage node and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD37 citations93
US7094660B2Aug 22, 2006
Method of manufacturing trench capacitor utilizing stabilizing member to support adjacent storage electrodes
SAMSUNG ELECTRONICS CO LTD22 citations93
US6929999B2Aug 16, 2005
Method of manufacturing semiconductor device with contact body extending in direction of bit line to contact storage node
SAMSUNG ELECTRONICS CO LTD25 citations93
US6852620B2Feb 8, 2005
Semiconductor device with self-aligned junction contact hole and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD17 citations93
US10541302B2Jan 21, 2020
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US10373961B2Aug 6, 2019
Semiconductor device including contact structure
SAMSUNG ELECTRONICS CO LTD10 citations84
US9576902B2Feb 21, 2017
Semiconductor device including landing pad
SAMSUNG ELECTRONICS CO LTD5 citations84
US9318369B2Apr 19, 2016
Patterns of a semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9064731B2Jun 23, 2015
Semiconductor device having landing pads
SAMSUNG ELECTRONICS CO LTD13 citations84
US7977724B2Jul 12, 2011
Capacitor and method of manufacturing the same comprising a stabilizing member
SAMSUNG ELECTRONICS CO LTD9 citations84
US7476584B2Jan 13, 2009
Method of fabricating a semiconductor device with a bit line contact plug
SAMSUNG ELECTRONICS CO LTD10 citations84
US7361591B2Apr 22, 2008
Method of fabricating semiconductor memory device
SAMSUNG ELECTRONICS CO LTD10 citations84
US7126180B2Oct 24, 2006
Semiconductor device including a capacitor having improved structural stability and enhanced capacitance, and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD13 citations84
US7078292B2Jul 18, 2006
Storage node contact forming method and structure for use in semiconductor memory
SAMSUNG ELECTRONICS CO LTD20 citations84
US6977197B2Dec 20, 2005
Semiconductor devices having DRAM cells and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6709972B2Mar 23, 2004
Methods for fabricating semiconductor devices by forming grooves across alternating elongated regions
SAMSUNG ELECTRONICS CO LTD17 citations84
US10679997B2Jun 9, 2020
Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations83
US10332831B2Jun 25, 2019
Semiconductor device including a bit line
SAMSUNG ELECTRONICS CO LTD7 citations83
US10886277B2Jan 5, 2021
Methods of manufacturing devices including a buried gate cell and a bit line structure including a thermal oxide buffer pattern
SAMSUNG ELECTRONICS CO LTD7 citations82
US7749834B2Jul 6, 2010
Method of fabricating semiconductor devices having buried contact plugs
SAMSUNG ELECTRONICS CO LTD16 citations79
US7575971B2Aug 18, 2009
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7300841B2Nov 27, 2007
Capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US7262108B2Aug 28, 2007
Methods for forming resistors for integrated circuit devices
SAMSUNG ELECTRONICS CO LTD7 citations74
US7247537B2Jul 24, 2007
Semiconductor device including an improved capacitor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US7227215B2Jun 5, 2007
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD5 citations74
US7176552B2Feb 13, 2007
Semiconductor memory device having a decoupling capacitor
SAMSUNG ELECTRONICS CO LTD8 citations74
US7049203B2May 23, 2006
Semiconductor device having a capacitor and method of fabricating same
SAMSUNG ELECTRONICS CO LTD10 citations74
US6897145B2May 24, 2005
Method for fabricating semiconductor device by forming damascene interconnections
SAMSUNG ELECTRONICS CO LTD6 citations74
US10896967B2Jan 19, 2021
Integrated circuit device including gate spacer structure
SAMSUNG ELECTRONICS CO LTD5 citations73
US9559103B2Jan 31, 2017
Memory device including selectively disposed landing pads expanded over signal line
SAMSUNG ELECTRONICS CO LTD6 citations73
US9437560B2Sep 6, 2016
Semiconductor device including landing pad
SAMSUNG ELECTRONICS CO LTD4 citations73
US9391202B2Jul 12, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9337151B2May 10, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9196620B2Nov 24, 2015
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US7446043B2Nov 4, 2008
Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations73
US6927126B2Aug 9, 2005
Method of manufacturing semiconductor device with interconnections and interconnection contacts and a device formed thereby
SAMSUNG ELECTRONICS CO LTD8 citations73
US10998324B2May 4, 2021
Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10332894B2Jun 25, 2019
Semiconductor device comprising work function metal pattern in boundry region and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10325802B2Jun 18, 2019
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations70
US10522550B2Dec 31, 2019
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations69
US10141316B2Nov 27, 2018
Semiconductor device with pillar and background patterns and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations69
US11355349B2Jun 7, 2022
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations63
US7601630B2Oct 13, 2009
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
PARK JE-MIN
2 patentsKIM DAE-IK
1 patentKIM EUN-JUNG
1 patentShowing the top 50 of 83 patents by PatentIndex Score.