Inventor
ALOKOZAI FRED
US17 patents
⚠️ This page may combine multiple inventors who share the name “ALOKOZAI FRED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ASM IP HOLDING BV
15 patentsUS10023960B2Jul 17, 2018
Process gas management for an inductively-coupled plasma deposition reactor
ASM IP HOLDING BV467 citations99
US9605342B2Mar 28, 2017
Process gas management for an inductively-coupled plasma deposition reactor
ASM IP HOLDING BV479 citations99
US9412564B2Aug 9, 2016
Semiconductor reaction chamber with plasma capabilities
ASM IP HOLDING BV496 citations99
US9029253B2May 12, 2015
Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
ASM IP HOLDING BV531 citations99
US9018111B2Apr 28, 2015
Semiconductor reaction chamber with plasma capabilities
ASM IP HOLDING BV532 citations99
US9299595B2Mar 29, 2016
Susceptor heater and method of heating a substrate
ASM IP HOLDING BV506 citations98
US9228259B2Jan 5, 2016
Method for treatment of deposition reactor
ASM IP HOLDING BV515 citations98
US9005539B2Apr 14, 2015
Chamber sealing member
ASM IP HOLDING BV547 citations98
US9340874B2May 17, 2016
Chamber sealing member
ASM IP HOLDING BV19 citations92
US11306395B2Apr 19, 2022
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
ASM IP HOLDING BV7 citations84
US8894870B2Nov 25, 2014
Multi-step method and apparatus for etching compounds containing a metal
ASM IP HOLDING BV9 citations84
US11976361B2May 7, 2024
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
ASM IP HOLDING BV2 citations72
US10714350B2Jul 14, 2020
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
ASM IP HOLDING BV4 citations67
US11810788B2Nov 7, 2023
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
ASM IP HOLDING BV0 citations56
US11967488B2Apr 23, 2024
Method for treatment of deposition reactor
ASM IP HOLDING BV0 citations51