P

Inventor

ALOKOZAI FRED

US17 patents
⚠️ This page may combine multiple inventors who share the name “ALOKOZAI FRED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ASM IP HOLDING BV

15 patents
US10023960B2Jul 17, 2018

Process gas management for an inductively-coupled plasma deposition reactor

ASM IP HOLDING BV467 citations99
US9605342B2Mar 28, 2017

Process gas management for an inductively-coupled plasma deposition reactor

ASM IP HOLDING BV479 citations99
US9412564B2Aug 9, 2016

Semiconductor reaction chamber with plasma capabilities

ASM IP HOLDING BV496 citations99
US9029253B2May 12, 2015

Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same

ASM IP HOLDING BV531 citations99
US9018111B2Apr 28, 2015

Semiconductor reaction chamber with plasma capabilities

ASM IP HOLDING BV532 citations99
US9299595B2Mar 29, 2016

Susceptor heater and method of heating a substrate

ASM IP HOLDING BV506 citations98
US9228259B2Jan 5, 2016

Method for treatment of deposition reactor

ASM IP HOLDING BV515 citations98
US9005539B2Apr 14, 2015

Chamber sealing member

ASM IP HOLDING BV547 citations98
US9340874B2May 17, 2016

Chamber sealing member

ASM IP HOLDING BV19 citations92
US11306395B2Apr 19, 2022

Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus

ASM IP HOLDING BV7 citations84
US8894870B2Nov 25, 2014

Multi-step method and apparatus for etching compounds containing a metal

ASM IP HOLDING BV9 citations84
US11976361B2May 7, 2024

Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus

ASM IP HOLDING BV2 citations72
US10714350B2Jul 14, 2020

Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures

ASM IP HOLDING BV4 citations67
US11810788B2Nov 7, 2023

Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures

ASM IP HOLDING BV0 citations56
US11967488B2Apr 23, 2024

Method for treatment of deposition reactor

ASM IP HOLDING BV0 citations51

DUNN TODD

1 patent

ALOKOZAI FRED

1 patent