Inventor

NAITO MASAMI

JP21 patents

⚠️ This page may combine multiple inventors who share the name “NAITO MASAMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAITO MASAMI

DENSO CORP

Method of manufacturing silicon carbide semiconductor device using active and inactive ion species

Manufacturing method of silicon carbide single crystals

Silicon carbide semiconductor device

Manufacturing method of silicon carbide single crystals

Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

Stacked single crystal compound semiconductor substrates

Silicon carbide semiconductor device having junction barrier Schottky diode

NUFLARE TECHNOLOGY INC

Film formation apparatus and film formation method

Film-forming manufacturing apparatus and method

Film forming apparatus

Film formation apparatus and film formation method

Film forming apparatus, susceptor, and film forming method

SHOWA DENKO KK

Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus

SiC epitaxial wafer and method for producing same

NIPPON DENSO CO

Semiconductor device having a gate electrode in a grove and a diffused region under the grove

DENSON CORP

Silicon carbide semiconductor device and manufacturing method thereof

TOYOTA CHUO KENKYUSHO KK

SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device

SUZUKI KUNIHIKO

Film-forming apparatus and film-forming method

WATANABE HIROKI

Method of manufacturing silicon carbide single crystal

KATAOKA MITSUHIRO

Silicon carbide semiconductor device

FUJIBAYASHI HIROAKI

Single crystal compound semiconductor substrate