Inventor

MALLELA HARI V

US24 patents

⚠️ This page may combine multiple inventors who share the name “MALLELA HARI V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MALLELA HARI V

IBM

Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess etch

Vertical FETs with variable bottom spacer recess

Vertical field effect transistors with metallic source/drain regions

Vertical FETs with variable bottom spacer recess

Vertical FETS with variable bottom spacer recess

Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess ETCH

Vertical fin field effect transistor with air gap spacers

Vertical field effect transistors having epitaxial fin channel with spacers below gate structure

Vertical FET devices with multiple channel lengths

Vertical fin field effect transistor with air gap spacers

Vertical fin field effect transistor with air gap spacers

Vertical field effect transistors with protective fin liner during bottom spacer recess etch

Vertical field effect transistors with metallic source/drain regions

Subtractive vFET process flow with replacement metal gate and metallic source/drain

Vertical FETS with variable bottom spacer recess

Vertical fin field effect transistor with air gap spacers

Vertical FET devices with multiple channel lengths

Vertical fin field effect transistor with air gap spacers

Patterned sidewall smoothing using a pre-smoothed inverted tone pattern

Patterned sidewall smoothing using a pre-smoothed inverted tone pattern

Unidirectional spacer in trench silicide

GLOBALFOUNDRIES INC

Anisotropic dielectric material gate spacer for a field effect transistor

Semiconductor memory device employing a ferromagnetic gate

GLOBAL FOUNDRIES INC

Anisotropic dielectric material gate spacer for a field effect transistor