Inventor
PRABHAKAR VENKATRAMAN
US56 patents
⚠️ This page may combine multiple inventors who share the name “PRABHAKAR VENKATRAMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CYPRESS SEMICONDUCTOR CORP
25 patentsUS8916432B1Dec 23, 2014
Methods to integrate SONOS into CMOS flow
CYPRESS SEMICONDUCTOR CORP30 citations93
US8953380B1Feb 10, 2015
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP14 citations92
US8796098B1Aug 5, 2014
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP19 citations92
US9431124B2Aug 30, 2016
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP7 citations84
US9356035B2May 31, 2016
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP5 citations84
US8988938B2Mar 24, 2015
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP6 citations84
US8947122B2Feb 3, 2015
Non-volatile latch structures with small area for FPGA
CYPRESS SEMICONDUCTOR CORP8 citations84
US8675405B1Mar 18, 2014
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP11 citations84
US9589652B1Mar 7, 2017
Asymmetric pass field-effect transistor for non-volatile memory
CYPRESS SEMICONDUCTOR CORP10 citations83
US9378821B1Jun 28, 2016
Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
CYPRESS SEMICONDUCTOR CORP7 citations81
US10262747B2Apr 16, 2019
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP2 citations73
US10062573B1Aug 28, 2018
Embedded SONOS with triple gate oxide and manufacturing method of the same
CYPRESS SEMICONDUCTOR CORP4 citations73
US9847137B2Dec 19, 2017
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP2 citations73
US9355725B2May 31, 2016
Non-volatile memory and method of operating the same
CYPRESS SEMICONDUCTOR CORP4 citations73
US9466374B2Oct 11, 2016
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP3 citations72
US9922988B2Mar 20, 2018
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP1 citations63
US9620516B2Apr 11, 2017
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP1 citations63
US10020060B2Jul 10, 2018
Asymmetric pass field-effect transistor for nonvolatile memory
CYPRESS SEMICONDUCTOR CORP1 citations62
US11355185B2Jun 7, 2022
Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory device and methods of fabrication thereof
CYPRESS SEMICONDUCTOR CORP0 citations60
US8897067B2Nov 25, 2014
Nonvolatile memory cells and methods of making such cells
CYPRESS SEMICONDUCTOR CORP2 citations58
US10002878B2Jun 19, 2018
Complementary SONOS integration into CMOS flow
CYPRESS SEMICONDUCTOR CORP1 citations52
US9893172B2Feb 13, 2018
Methods to integrate SONOS into CMOS flow
CYPRESS SEMICONDUCTOR CORP1 citations52
US9627073B2Apr 18, 2017
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP0 citations52
US10192622B2Jan 29, 2019
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP0 citations51
US9818484B2Nov 14, 2017
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP0 citations51
MAXIM INTEGRATED PRODUCTS
7 patentsUS7324387B1Jan 29, 2008
Low power high density random access memory flash cells and arrays
MAXIM INTEGRATED PRODUCTS211 citations98
US7944750B1May 17, 2011
Multi-programmable non-volatile memory cell
MAXIM INTEGRATED PRODUCTS7 citations80
US7791955B2Sep 7, 2010
Method of erasing a block of memory cells
MAXIM INTEGRATED PRODUCTS4 citations72
US7436710B2Oct 14, 2008
EEPROM memory device with cell having NMOS in a P pocket as a control gate, PMOS program/erase transistor, and PMOS access transistor in a common well
MAXIM INTEGRATED PRODUCTS4 citations72
US7535758B2May 19, 2009
One or multiple-times programmable device
MAXIM INTEGRATED PRODUCTS4 citations63
US7835184B2Nov 16, 2010
EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common well
MAXIM INTEGRATED PRODUCTS3 citations61
US7835186B2Nov 16, 2010
Method of programming a selected memory cell
MAXIM INTEGRATED PRODUCTS1 citations61
PRABHAKAR VENKATRAMAN
6 patentsUS7894257B1Feb 22, 2011
Low voltage low cost non-volatile memory
PRABHAKAR VENKATRAMAN8 citations83
US7835179B1Nov 16, 2010
Non-volatile latch with low voltage operation
PRABHAKAR VENKATRAMAN9 citations83
US7969785B1Jun 28, 2011
Low voltage non-volatile memory with charge trapping layer
PRABHAKAR VENKATRAMAN2 citations62
US8576633B2Nov 5, 2013
1T smart write
PRABHAKAR VENKATRAMAN3 citations58
US12469838B2Nov 11, 2025
Systems and methods involving use of nitrogen-containing plasma to treat lithium iron phosphate cathodes
PRABHAKAR VENKATRAMAN0 citations51
US12015142B2Jun 18, 2024
Methods involving use of nitrogen-containing plasma to treat liquid electrolyte lithium-ion cathode materials
PRABHAKAR VENKATRAMAN0 citations51
Longitude Flash Memory Solutions Ltd
4 patentsUS10706937B2Jul 7, 2020
Asymmetric pass field-effect transistor for non-volatile memory
Longitude Flash Memory Solutions Ltd1 citations72
US10332599B2Jun 25, 2019
Bias scheme for word programming in non-volatile memory and inhibit disturb reduction
Longitude Flash Memory Solutions Ltd3 citations71
US10784356B2Sep 22, 2020
Embedded sonos with triple gate oxide and manufacturing method of the same
Longitude Flash Memory Solutions Ltd0 citations52
US10418110B2Sep 17, 2019
Asymmetric pass field-effect transistor for nonvolatile memory
Longitude Flash Memory Solutions Ltd0 citations51
Infineon Technologies LLC
4 patentsUS11810616B2Nov 7, 2023
Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory device and methods of fabrication thereof
Infineon Technologies LLC0 citations60
US12183395B2Dec 31, 2024
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device and methods of operation thereof
Infineon Technologies LLC0 citations59
US12242949B2Mar 4, 2025
Compute-in-memory devices, systems and methods of operation thereof
Infineon Technologies LLC0 citations55
US11610820B2Mar 21, 2023
Embedded SONOS and high voltage select gate with a high-K metal gate and manufacturing methods of the same
Infineon Technologies LLC0 citations52
(unassigned)
2 patentsLONGITDUE FLASH MEMORY SOLUTIONS LTD
1 patentCYPRESS SEMICONDUTOR CORP
1 patentShowing the top 50 of 56 patents by PatentIndex Score.