Inventor
KIM WAN GEE
KR7 patents
Patents
7 patentsUS9231199B2Jan 5, 2016
Electronic device including a switch element in which a metal nitride layer has a nitrogen concentration increasing as a closer distance from a switching layer, and method for fabricating the same
SK HYNIX INC7 citations82
US8921214B2Dec 30, 2014
Variable resistance memory device and method for fabricating the same
SK HYNIX INC5 citations72
US9385311B2Jul 5, 2016
Semiconductor device and electronic device including the same
SK HYNIX INC2 citations61
US9203019B2Dec 1, 2015
Memory device having a tunnel barrier layer in a memory cell, and electronic device including the same
SK HYNIX INC1 citations51
US9130153B2Sep 8, 2015
Semiconductor device and electronic device including the same
SK HYNIX INC1 citations51
US9887353B2Feb 6, 2018
Electronic device and method for fabricating the same
SK HYNIX INC0 citations48
US9455401B2Sep 27, 2016
Memory device having a tunnel barrier layer in a memory cell, and electronic device including the same
SK HYNIX INC0 citations40