Inventor

CHIEN VOLUME

TW83 patents

⚠️ This page may combine multiple inventors who share the name “CHIEN VOLUME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHIEN VOLUME

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Image sensor device and method for forming the same

Semiconductor structure and manufacuting method of the same

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Support structure for integrated circuitry

Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer

Formation of buried color filters in a back side illuminated image sensor with an ONO-like structure

Image sensor device with sub-isolation in pixels

Pad structure layout for semiconductor device

Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer

Bonding pad on a back side illuminated image sensor

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Support structure for integrated circuitry

Image sensor including dual isolation and method of making the same

Image sensing device and manufacturing method thereof

Apparatus and method for fabricating a light guiding grid

Semiconductor wafer and semiconductor die

Metal pad offset for multi-layer metal layout

Black level control for image sensors

Image sensor device and method for forming the same

Backside illuminated image sensor and method of manufacturing the same

Semiconductor structure and manufacturing method thereof

Image sensor device with light blocking structure

Image sensor including dual isolation and method of making the same

Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Mechanisms for forming image sensor device

Protection layer in CMOS image sensor array region

Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Mechanisms for forming image sensor device

Support structure for integrated circuitry

Image sensor device

Semiconductor structure and manufacuting method of the same

Image sensor device with light guiding structure

Backside illuminated image sensor device with shielding layer and forming method

TAIWAN SEMICONDUCTOR MFG

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Formation of buried color filters in a back side illuminated image sensor with an ono-like structure

Metal shield structure and methods for BSI image sensors

Deep trench isolation with air-gap in backside illumination image sensor chips

Method for reducing cu surface defects following cu ECP

Image sensor with stacked grid structure

Dielectric film for image sensor

Bonding pad on a back side illuminated image sensor

Image sensor and manufacturing method thereof

Photodiode with concave reflector

Backside illumination image sensor chips and methods for forming the same

LIN JENG-SHYAN

Dual shallow trench isolation and related applications

SHIH YU-HAO

Inserted reflective shield to improve quantum efficiency of image sensors

TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD

Backside illumination image sensor chips and methods for forming the same