Inventor

HSU YUNG-LUNG

TW78 patents

⚠️ This page may combine multiple inventors who share the name “HSU YUNG-LUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSU YUNG-LUNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Semiconductor device with a radiation sensing region and method for forming the same

Semiconductor structure and manufacuting method of the same

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Stacked grid design for improved optical performance and isolation

Semiconductor device with a radiation sensing region and method for forming the same

Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters

CMOS image sensor structure with crosstalk improvement

Dielectric grid bottom profile for light focusing

Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer

Formation of buried color filters in a back side illuminated image sensor with an ONO-like structure

Semiconductor device and manufacturing method thereof

Image sensor device with sub-isolation in pixels

Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer

Semiconductor device with a radiation sensing region and method for forming the same

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Protection ring for image sensors

Memory with a raised dummy feature surrounding a cell region

Image sensing device and manufacturing method thereof

Backside illuminated image sensor and method of manufacturing the same

Complementary metal grid and deep trench isolation in CIS application

Backside illuminated image sensor and method of manufacturing the same

CMOS image sensor structure with IR/NIR integration

Integrated circuit and image sensing device having metal shielding layer and related fabricating method

Protection ring for image sensors

Semiconductor structure

Semiconductor structure

Semiconductor device with reduced leakage current and fabricating method thereof

Conduction layer for stacked CIS charging prevention

Backside illuminated image sensor and method of manufacturing the same

Method of testing wafer

Semiconductor structure, testing and fabricating methods thereof

Semiconductor device having milti-height structure and method of manufacturing the same

Image sensor and method for manufacturing the same

Stacked grid design for improved optical performance and isolation

Semiconductor device with a radiation sensing region and method for forming the same

Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters

High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof

Stacked grid design for improved optical performance and isolation

Stacked grid design for improved optical performance and isolation

TAIWAN SEMICONDUCTOR MFG

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Integrated circuit polysilicon resistor having a silicide extension to achieve 100 % metal shielding from hydrogen intrusion

Integrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusion

Method to form polysilicon resistors shielded from hydrogen intrusion

Method for making improved polysilicon emitters for bipolar transistors on BiCMOS integrated circuits

Formation of buried color filters in a back side illuminated image sensor with an ono-like structure

Via array monitor and method of monitoring induced electrical charging

Using LPCVD silicon nitride cap as a barrier to reduce resistance variations from hydrogen intrusion of high-value polysilicon resistor

Method of manufacturing a back side illuminated (BSI) image sensor

Method of improving the voltage coefficient of resistance of high polysilicon resistors