Inventor

KAMINENI VIMAL K

US17 patents

⚠️ This page may combine multiple inventors who share the name “KAMINENI VIMAL K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KAMINENI VIMAL K

GLOBALFOUNDRIES INC

Silicide protection during contact metallization and resulting semiconductor structures

Methods of forming stressed fin channel structures for FinFET semiconductor devices

Middle of the line (MOL) metal contacts

Silicide protection during contact metallization and resulting semiconductor structures

FinFET channel stress using tungsten contacts in raised epitaxial source and drain

Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices

Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices

Modified dielectric fill between the contacts of field-effect transistors

Interconnect structures with airgaps and dielectric-capped interconnects

Tungsten gate and method for forming

Middle of the line (MOL) metal contacts

Methods of forming stressed fin channel structures for FinFET semiconductor devices

Short channel and long channel devices

IBM

Method to recess cobalt for gate metal application

Method to recess cobalt for gate metal application

Method to recess cobalt for gate metal application

PARK CHANG SEO

Replacement metal gate semiconductor device formation using low resistivity metals