Inventor

ASAMURA HIDETOSHI

JP2 patents

⚠️ This page may combine multiple inventors who share the name “ASAMURA HIDETOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KAWAMURA KEISUKE

1 patent

US8563442B2Oct 22, 2013

Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate

KAWAMURA KEISUKE0 citations42

ASAMURA HIDETOSHI

1 patent

US8986448B2Mar 24, 2015

Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method

ASAMURA HIDETOSHI1 citations38