Inventor
SHU CHENG-BO
TW31 patents
Patents
31 patentsUS10504912B2Dec 10, 2019
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US12094984B2Sep 17, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11575008B2Feb 7, 2023
Semiconductor arrangement and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11349035B2May 31, 2022
Semiconductor device including non-volatile memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10840333B2Nov 17, 2020
Semiconductor arrangement and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10693018B2Jun 23, 2020
Method of manufacturing a semiconductor device including non-volatile memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10510767B1Dec 17, 2019
Integrated circuit and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10276728B2Apr 30, 2019
Semiconductor device including non-volatile memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10170488B1Jan 1, 2019
Non-volatile memory of semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11508843B1Nov 22, 2022
Semiconductor device having fully oxidized gate oxide layer and method for making the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11532637B2Dec 20, 2022
Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10879257B2Dec 29, 2020
Integrated chip having a logic gate electrode and a tunnel dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9799755B2Oct 24, 2017
Method for manufacturing memory device and method for manufacturing shallow trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12402378B2Aug 26, 2025
Semiconductor arrangement including first and second gate electrodes and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166121B2Dec 10, 2024
Integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12144173B2Nov 12, 2024
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990545B2May 21, 2024
Semiconductor device having fully oxidized gate oxide layer and method for making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11894425B2Feb 6, 2024
Semiconductor arrangement and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11711917B2Jul 25, 2023
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688805B2Jun 27, 2023
Integrated circuit structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424261B2Aug 23, 2022
Integrated circuit with different memory gate work functions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121047B2Sep 14, 2021
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114452B2Sep 7, 2021
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937795B2Mar 2, 2021
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317584B2May 27, 2025
Method of forming high voltage transistor and structure resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12114503B2Oct 8, 2024
Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10879258B2Dec 29, 2020
Memory cell comprising a metal control gate with a work function for an enlarged operation window
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10672783B2Jun 2, 2020
Integrated circuit and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10505015B2Dec 10, 2019
Memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269822B2Apr 23, 2019
Method to fabricate uniform tunneling dielectric of embedded flash memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9997527B1Jun 12, 2018
Method for manufacturing embedded non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41