Inventor
RAAB MICHAEL
US20 patents
⚠️ This page may combine multiple inventors who share the name “RAAB MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
11 patentsUS7586153B2Sep 8, 2009
Technique for forming recessed strained drain/source regions in NMOS and PMOS transistors
ADVANCED MICRO DEVICES INC25 citations92
US6812115B2Nov 2, 2004
Method of filling an opening in a material layer with an insulating material
ADVANCED MICRO DEVICES INC26 citations92
US6620718B1Sep 16, 2003
Method of forming metal silicide regions on a gate electrode and on the source/drain regions of a semiconductor device
ADVANCED MICRO DEVICES INC47 citations92
US6423634B1Jul 23, 2002
Method of forming low resistance metal silicide region on a gate electrode of a transistor
ADVANCED MICRO DEVICES INC27 citations92
US6306698B1Oct 23, 2001
Semiconductor device having metal silicide regions of differing thicknesses above the gate electrode and the source/drain regions, and method of making same
ADVANCED MICRO DEVICES INC46 citations92
US6271122B1Aug 7, 2001
Method of compensating for material loss in a metal silicone layer in contacts of integrated circuit devices
ADVANCED MICRO DEVICES INC37 citations92
US6268257B1Jul 31, 2001
Method of forming a transistor having a low-resistance gate electrode
ADVANCED MICRO DEVICES INC37 citations92
US6593197B2Jul 15, 2003
Sidewall spacer based fet alignment technology
ADVANCED MICRO DEVICES INC16 citations84
US7381624B2Jun 3, 2008
Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate
ADVANCED MICRO DEVICES INC5 citations63
US6492210B2Dec 10, 2002
Method for fully self-aligned FET technology
ADVANCED MICRO DEVICES INC5 citations63
US7316975B2Jan 8, 2008
Method of forming sidewall spacers
ADVANCED MICRO DEVICES INC5 citations62