Inventor
NIEN YI-HSIN
TW21 patents
Patents
21 patentsUS11682440B2Jun 20, 2023
Systems and methods for memory operation using local word lines
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11631456B2Apr 18, 2023
Bitcell supporting bit-write-mask function
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569246B2Jan 31, 2023
Four CPP wide memory cell with buried power grid, and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11264070B2Mar 1, 2022
Systems and methods for memory operation using local word lines
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11183234B2Nov 23, 2021
Bitcell supporting bit-write-mask function
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11404113B2Aug 2, 2022
Memory device including a word line with portions with different sizes in different metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US12387768B2Aug 12, 2025
Memory device including separate negative bit line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369292B2Jul 22, 2025
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12367929B2Jul 22, 2025
Memory device having a negative voltage circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12334145B2Jun 17, 2025
Bitcell supporting bit-write-mask function
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12260903B2Mar 25, 2025
Memory devices with improved bit line loading
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12159688B2Dec 3, 2024
Systems and methods for memory operation using local word lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12137548B2Nov 5, 2024
Four CPP wide memory cell with buried power grid, and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11929116B2Mar 12, 2024
Memory device having a negative voltage circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11910587B2Feb 20, 2024
Memory circuit having SRAM memory cells and method for forming a SRAM memory cell structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11805636B2Oct 31, 2023
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11562786B2Jan 24, 2023
Memory device having a negative voltage circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230318B2Feb 18, 2025
Memory device including a word line with portions with different sizes in different metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12531549B2Jan 20, 2026
Latch circuits and methods for operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations55
US12125523B2Oct 22, 2024
Memory device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12586628B2Mar 24, 2026
Adjusting pulse width based on address signal in memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49