Inventor

RASCUNA SIMONE

IT28 patents

⚠️ This page may combine multiple inventors who share the name “RASCUNA SIMONE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RASCUNA SIMONE

ST MICROELECTRONICS SRL

Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereof

Silicon carbide diode with reduced voltage drop, and manufacturing method thereof

Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device

Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device

Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereof

Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereof

Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereof

Manufacturing method of a semiconductor device with efficient edge structure

Manufacturing method of a semiconductor device with efficient edge structure

Manufacturing method of a semiconductor device with efficient edge structure

Overvoltage protection device

Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic device

Overvoltage protection device

Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device

Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC material

Silicon carbide power device with improved robustness and corresponding manufacturing process

Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device

Silicon carbide power device with improved robustness and corresponding manufacturing process

Silicon carbide diode with reduced voltage drop, and manufacturing method thereof

Forming an electronic device, such as a JBS or MPS diode, based on 3C—SiC, and 3C—SiC electronic device

Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatus

Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatus

Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereof

Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereof

Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device

JBS device with improved electrical performances, and manufacturing process of the JBS device

Wide bandgap high-density semiconductor switching device and manufacturing process thereof

SAGGIO MARIO GIUSEPPE

Power MOSFET comprising a plurality of columnar structures defining the charge balancing region