Inventor

KANAYAMA MASAAKI

JP3 patents

⚠️ This page may combine multiple inventors who share the name “KANAYAMA MASAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI MONSANTO CHEM

2 patents

US4865655ASep 12, 1989

Gallium arsenide phosphide mixed crystal epitaxial wafer with a graded buffer layer

MITSUBISHI MONSANTO CHEM36 citations91

US4756792AJul 12, 1988

Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film

MITSUBISHI MONSANTO CHEM8 citations71

MITSUBISHI CHEM IND

1 patent

US4968642ANov 6, 1990

Method of making a gallium arsenide phosphide-, mixed crystal-epitaxial wafer

MITSUBISHI CHEM IND4 citations61