Inventor
JUN YOUNG KWON
KR51 patents
⚠️ This page may combine multiple inventors who share the name “JUN YOUNG KWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG SEMICON CO LTD
36 patentsUS5945706AAug 31, 1999
Memory device
LG SEMICON CO LTD62 citations96
US5798965AAug 25, 1998
Dynamic random access memory having no capacitor and method for fabricating the same
LG SEMICON CO LTD91 citations96
US6171967B1Jan 9, 2001
Method for forming a self-aligned metal wire of a semiconductor device
LG SEMICON CO LTD24 citations93
US6043149AMar 28, 2000
Method of purifying a metal line in a semiconductor device
LG SEMICON CO LTD22 citations93
US6013578AJan 11, 2000
Method for forming a metal wiring structure of a semiconductor device
LG SEMICON CO LTD33 citations93
US5960313ASep 28, 1999
Metal wire of semiconductor device and method for forming the same
LG SEMICON CO LTD28 citations93
US5936297AAug 10, 1999
Programmable semiconductor element having an antifuse structure
LG SEMICON CO LTD17 citations93
US5915191AJun 22, 1999
Method for fabricating a semiconductor device with improved device integration and field-region insulation
LG SEMICON CO LTD34 citations93
US5897369AApr 27, 1999
Method for forming interconnection of a semiconductor device
LG SEMICON CO LTD51 citations93
US5888902AMar 30, 1999
Method for forming multilayered interconnection of semiconductor device
LG SEMICON CO LTD17 citations93
US5684331ANov 4, 1997
Multilayered interconnection of semiconductor device
LG SEMICON CO LTD21 citations93
US5641383AJun 24, 1997
Selective etching process
LG SEMICON CO LTD29 citations93
US5707274AJan 13, 1998
Chemical mechanical polishing apparatus for semiconductor wafer
LG SEMICON CO LTD50 citations92
US5882968AMar 16, 1999
Semiconductor device fabrication method
LG SEMICON CO LTD19 citations84
US5874357AFeb 23, 1999
Method of forming wiring structure of semiconductor device
LG SEMICON CO LTD16 citations82
US5948705ASep 7, 1999
Method of forming interconnection line
LG SEMICON CO LTD14 citations74
US5900072AMay 4, 1999
Insulating layer structure for semiconductor device
LG SEMICON CO LTD5 citations74
US5871869AFeb 16, 1999
Phase shifting mask and method of manufacturing the same
LG SEMICON CO LTD8 citations74
US5783484AJul 21, 1998
Insulating layer planarizing method for semiconductor device using mutually engaged insulating layers to improve strength and thermal deformation
LG SEMICON CO LTD5 citations74
US5670806ASep 23, 1997
Semiconductor memory device
LG SEMICON CO LTD7 citations74
US5652169AJul 29, 1997
Method for fabricating a programmable semiconductor element having an antifuse structure
LG SEMICON CO LTD14 citations74
US5949705ASep 7, 1999
DRAM cell, DRAM and method for fabricating the same
LG SEMICON CO LTD6 citations73
US5792704AAug 11, 1998
Method for fabricating wiring in semiconductor device
LG SEMICON CO LTD16 citations73
US5771189AJun 23, 1998
DRAM cell and method of reading data from DRAM cell
LG SEMICON CO LTD11 citations73
US6365972B1Apr 2, 2002
Method for forming a metal wiring structure of a semiconductor device
LG SEMICON CO LTD4 citations63
US6064119AMay 16, 2000
Wiring structure and formation method thereof for semiconductor device
LG SEMICON CO LTD5 citations63
US5899717AMay 4, 1999
Method for fabricating semiconductor device
LG SEMICON CO LTD5 citations63
US5837604ANov 17, 1998
Method for forming interconnection of semiconductor device
LG SEMICON CO LTD4 citations63
US5790451AAug 4, 1998
Memory cell, memory device and method of fabricating the same
LG SEMICON CO LTD1 citations63
US5756397AMay 26, 1998
Method of fabricating a wiring in a semiconductor device
LG SEMICON CO LTD3 citations63
US5714780AFeb 3, 1998
Semiconductor memory and method of fabricating the same
LG SEMICON CO LTD3 citations63
US5691221ANov 25, 1997
Method for manufacturing semiconductor memory device having a stacked capacitor
LG SEMICON CO LTD4 citations63
US5654223AAug 5, 1997
Method for fabricating semiconductor memory element
LG SEMICON CO LTD5 citations60
US6852606B1Feb 8, 2005
Method for forming isolation layer of semiconductor device and semiconductor device
LG SEMICON CO LTD1 citations52
US5864154AJan 26, 1999
Semiconductor memory device and method for fabricating the same
LG SEMICON CO LTD0 citations52
US6054346AApr 25, 2000
DRAM cell, DRAM and method for fabricating the same
LG SEMICON CO LTD0 citations51
GOLD STAR ELECTRONICS
8 patentsUS5342800AAug 30, 1994
Method of making memory cell capacitor
GOLD STAR ELECTRONICS71 citations96
US5587331ADec 24, 1996
Method of forming a contact hole for a metal line in a semiconductor device
GOLD STAR ELECTRONICS21 citations93
US5461248AOct 24, 1995
Trench capacitor memory cell and process for formation thereof
GOLD STAR ELECTRONICS15 citations74
US5409855AApr 25, 1995
Process for forming a semiconductor device having a capacitor
GOLD STAR ELECTRONICS17 citations74
US5409856AApr 25, 1995
Process of making a capacitor in a semiconductor memory device
GOLD STAR ELECTRONICS11 citations74
US5346845ASep 13, 1994
Process for forming a trench capacitor memory cell
GOLD STAR ELECTRONICS7 citations74
US5256248AOct 26, 1993
Method for patterning semiconductor
GOLD STAR ELECTRONICS14 citations74
US5480824AJan 2, 1996
Semiconductor memory cell capacitor and fabrication method thereof
GOLD STAR ELECTRONICS6 citations63
HYUNDAI ELECTRONICS IND
2 patentsJUN YOUNG KWON
2 patentsLG SEMICON CO LDT
1 patentHYNIX SEMICONDUCTOR INC
1 patentShowing the top 50 of 51 patents by PatentIndex Score.