Inventor
WONG KING YUEN
CN130 patents
⚠️ This page may combine multiple inventors who share the name “WONG KING YUEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS10050621B2Aug 14, 2018
Low static current semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US10411681B2Sep 10, 2019
Semiconductor device and circuit protecting method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10056478B2Aug 21, 2018
High-electron-mobility transistor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10002955B2Jun 19, 2018
High-electron-mobility transistor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9882553B2Jan 30, 2018
Semiconductor device and circuit protecting method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9793389B1Oct 17, 2017
Apparatus and method of fabrication for GaN/Si transistors isolation
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations84
US9601608B2Mar 21, 2017
Structure for a gallium nitride (GaN) high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9443969B2Sep 13, 2016
Transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10284195B2May 7, 2019
Low static current semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US10991803B2Apr 27, 2021
HEMT-compatible lateral rectifier structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10790375B2Sep 29, 2020
High electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10083856B2Sep 25, 2018
Isolation regions for semiconductor structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9978844B2May 22, 2018
HEMT-compatible lateral rectifier structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9508807B2Nov 29, 2016
Method of forming high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10804895B2Oct 13, 2020
Low static current semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9583588B2Feb 28, 2017
Method of making high electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9553182B2Jan 24, 2017
Circuit structure, transistor and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9419093B2Aug 16, 2016
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US9214539B2Dec 15, 2015
Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations63
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD
9 patentsUS11942525B2Mar 26, 2024
Semiconductor device with multichannel heterostructure and manufacturing method thereof
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD2 citations72
US11302778B2Apr 12, 2022
Semiconductor device and manufacturing method therefor
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD2 citations72
US11502170B2Nov 15, 2022
Semiconductor device and manufacturing method thereof
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD2 citations67
US11721729B2Aug 8, 2023
Semiconductor device and fabrication method thereof
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations63
US11569358B2Jan 31, 2023
Semiconductor device and fabrication method thereof
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations63
US11569359B2Jan 31, 2023
Semiconductor device and fabrication method thereof
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations63
US11201222B2Dec 14, 2021
Semiconductor device and fabrication method thereof
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations63
US10971579B2Apr 6, 2021
Semiconductor device and fabrication method thereof
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD1 citations63
US12289915B2Apr 29, 2025
Semiconductor structure
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
6 patentsUS8803158B1Aug 12, 2014
High electron mobility transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG24 citations93
US9147743B2Sep 29, 2015
High electron mobility transistor structure with improved breakdown voltage performance
TAIWAN SEMICONDUCTOR MFG4 citations84
US8357579B2Jan 22, 2013
Methods of forming integrated circuits
TAIWAN SEMICONDUCTOR MFG8 citations84
US9379208B2Jun 28, 2016
Integrated circuits and methods of forming integrated circuits
TAIWAN SEMICONDUCTOR MFG2 citations63
US9184259B2Nov 10, 2015
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG2 citations63
US9111956B2Aug 18, 2015
Rectifier structures with low leakage
TAIWAN SEMICONDUCTOR MFG1 citations63
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD
3 patentsUS10833159B1Nov 10, 2020
Semiconductor device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD33 citations93
US12125847B2Oct 22, 2024
Nitride-based semiconductor device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD2 citations71
US12166102B2Dec 10, 2024
Semiconductor device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD1 citations62
WONG KING-YUEN
3 patentsUS9165839B2Oct 20, 2015
Plasma protection diode for a HEMT device
WONG KING-YUEN6 citations84
US8624296B1Jan 7, 2014
High electron mobility transistor including an embedded flourine region
WONG KING-YUEN18 citations84
US8841703B2Sep 23, 2014
High electron mobility transistor and method of forming the same
WONG KING-YUEN4 citations73
Yao fu-wei
2 patentsSIEMENS MEDICAL SYSTEMS INC
2 patentsSIEMENS MEDICAL SOLUTIONS
2 patentsWONG KING YUEN
1 patentHSU CHUN-WEI
1 patentSEO CHI HYUNG
1 patentTSAI CHUN HSIUNG
1 patentShowing the top 50 of 130 patents by PatentIndex Score.