Inventor
HEINRICI MARKUS
AT11 patents
⚠️ This page may combine multiple inventors who share the name “HEINRICI MARKUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
8 patentsUS9844134B2Dec 12, 2017
Device including a metallization layer and method of manufacturing a device
INFINEON TECHNOLOGIES AG10 citations82
US9929111B2Mar 27, 2018
Method of manufacturing a layer structure having partially sealed pores
INFINEON TECHNOLOGIES AG4 citations71
US9620466B1Apr 11, 2017
Method of manufacturing an electronic device having a contact pad with partially sealed pores
INFINEON TECHNOLOGIES AG4 citations71
US9190322B2Nov 17, 2015
Method for producing a copper layer on a semiconductor body using a printing process
INFINEON TECHNOLOGIES AG3 citations61
US11195713B2Dec 7, 2021
Methods of forming a silicon-insulator layer and semiconductor device having the same
INFINEON TECHNOLOGIES AG0 citations57
US10967450B2Apr 6, 2021
Slicing SiC material by wire electrical discharge machining
INFINEON TECHNOLOGIES AG0 citations53
US9793119B2Oct 17, 2017
Method for structuring a substrate using a protection layer as a mask
INFINEON TECHNOLOGIES AG0 citations45
US9768023B1Sep 19, 2017
Method for structuring a substrate
INFINEON TECHNOLOGIES AG0 citations45
INFINEON TECHNOLOGIES AUSTRIA AG
3 patentsUS10453806B2Oct 22, 2019
Methods for forming semiconductor devices and semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations48
US9818602B2Nov 14, 2017
Method of depositing a resin material on a semiconductor body with an inkjet process
INFINEON TECHNOLOGIES AUSTRIA AG0 citations46
US10373868B2Aug 6, 2019
Method of processing a porous conductive structure in connection to an electronic component on a substrate
INFINEON TECHNOLOGIES AUSTRIA AG0 citations40