Inventor
HATAKENAKA SUSUMU
JP6 patents
Patents
6 patentsUS9728611B2Aug 8, 2017
GaN semiconductor device comprising carbon and iron
MITSUBISHI ELECTRIC CORP3 citations68
US11107677B2Aug 31, 2021
Method for manufacturing SiC epitaxial substrate
MITSUBISHI ELECTRIC CORP0 citations56
US9793363B1Oct 17, 2017
GaN semiconductor device comprising carbon and iron
MITSUBISHI ELECTRIC CORP0 citations47
US9564525B2Feb 7, 2017
Compound semiconductor device
MITSUBISHI ELECTRIC CORP0 citations46
US9520526B2Dec 13, 2016
Manufacturing method of avalanche photodiode
MITSUBISHI ELECTRIC CORP0 citations46
US10199218B2Feb 5, 2019
Method for manufacturing group III-V nitride semiconductor epitaxial wafer
MITSUBISHI ELECTRIC CORP0 citations36