Inventor
REVITZ MARTIN
12 patents
⚠️ This page may combine multiple inventors who share the name “REVITZ MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
11 patentsUS5008207AApr 16, 1991
Method of fabricating a narrow base transistor
IBM57 citations94
US4354309AOct 19, 1982
Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon
IBM63 citations94
US4667395AMay 26, 1987
Method for passivating an undercut in semiconductor device preparation
IBM31 citations92
US4249968AFeb 10, 1981
Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers
IBM43 citations91
US5656514AAug 12, 1997
Method for making heterojunction bipolar transistor with self-aligned retrograde emitter profile
IBM96 citations90
US4341009AJul 27, 1982
Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate
IBM32 citations89
US4191603AMar 4, 1980
Making semiconductor structure with improved phosphosilicate glass isolation
IBM29 citations81
US4394406AJul 19, 1983
Double polysilicon contact structure and process
IBM18 citations72
US5385850AJan 31, 1995
Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer
IBM3 citations62
US4701998AOct 27, 1987
Method for fabricating a bipolar transistor
IBM5 citations61
US4437108AMar 13, 1984
Double polysilicon contact structure
IBM1 citations50