Inventor
UCHIDA YUKIMASA
32 patents
⚠️ This page may combine multiple inventors who share the name “UCHIDA YUKIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO SHIBAURA ELECTRIC CO
25 patentsUS4814853AMar 21, 1989
Semiconductor device with programmable fuse
TOKYO SHIBAURA ELECTRIC CO60 citations96
US4585955AApr 29, 1986
Internally regulated power voltage circuit for MIS semiconductor integrated circuit
TOKYO SHIBAURA ELECTRIC CO98 citations96
US4517583AMay 14, 1985
Semiconductor integrated circuit including a fuse element
TOKYO SHIBAURA ELECTRIC CO63 citations96
US4432610AFeb 21, 1984
Liquid crystal display device
TOKYO SHIBAURA ELECTRIC CO142 citations96
US4385308AMay 24, 1983
Non-volatile semiconductor memory device
TOKYO SHIBAURA ELECTRIC CO111 citations96
US4044343AAug 23, 1977
Non-volatile random access memory system
TOKYO SHIBAURA ELECTRIC CO63 citations96
US4697252ASep 29, 1987
Dynamic type semiconductor memory device
TOKYO SHIBAURA ELECTRIC CO27 citations93
US4723155AFeb 2, 1988
Semiconductor device having a programmable fuse element
TOKYO SHIBAURA ELECTRIC CO33 citations92
US4608666AAug 26, 1986
Semiconductor memory
TOKYO SHIBAURA ELECTRIC CO53 citations92
US4532607AJul 30, 1985
Programmable circuit including a latch to store a fuse's state
TOKYO SHIBAURA ELECTRIC CO49 citations92
US4479202AOct 23, 1984
CMOS Sense amplifier
TOKYO SHIBAURA ELECTRIC CO38 citations92
US4327368AApr 27, 1982
CMOS Transistor pair with reverse biased substrate to prevent latch-up
TOKYO SHIBAURA ELECTRIC CO35 citations92
US4122541AOct 24, 1978
Non-volatile memory device
TOKYO SHIBAURA ELECTRIC CO34 citations92
US4641165AFeb 3, 1987
Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation
TOKYO SHIBAURA ELECTRIC CO21 citations82
US4453234AJun 5, 1984
Nonvolatile semiconductor memory device
TOKYO SHIBAURA ELECTRIC CO20 citations82
US3950737AApr 13, 1976
Nonvolatile counter circuit
TOKYO SHIBAURA ELECTRIC CO31 citations78
US4489339ADec 18, 1984
SOS MOSFET With self-aligned channel contact
TOKYO SHIBAURA ELECTRIC CO15 citations74
US4484209ANov 20, 1984
SOS Mosfet with thinned channel contact region
TOKYO SHIBAURA ELECTRIC CO10 citations74
US4467452AAug 21, 1984
Nonvolatile semiconductor memory device and method of fabricating the same
TOKYO SHIBAURA ELECTRIC CO16 citations74
US4287574ASep 1, 1981
Memory cell with non-volatile memory elements
TOKYO SHIBAURA ELECTRIC CO8 citations74
US4168537ASep 18, 1979
Nonvolatile memory system enabling nonvolatile data transfer during power on
TOKYO SHIBAURA ELECTRIC CO10 citations74
US4123771AOct 31, 1978
Nonvolatile semiconductor memory
TOKYO SHIBAURA ELECTRIC CO7 citations74
US4011576AMar 8, 1977
Nonvolatile semiconductor memory devices
TOKYO SHIBAURA ELECTRIC CO19 citations74
US4122531AOct 24, 1978
Memory and control circuit for the memory
TOKYO SHIBAURA ELECTRIC CO13 citations69
US4236170ANov 25, 1980
Gate controlled negative resistance semiconductor device
TOKYO SHIBAURA ELECTRIC CO2 citations63
TOSHIBA KK
7 patentsUS4837460AJun 6, 1989
Complementary MOS circuit having decreased parasitic capacitance
TOSHIBA KK51 citations92
US4792834ADec 20, 1988
Semiconductor memory device with buried layer under groove capacitor
TOSHIBA KK53 citations92
US5428236AJun 27, 1995
Semiconductor memory device having trenched capicitor
TOSHIBA KK13 citations74
US5185567AFeb 9, 1993
Power circuit for an LSI
TOSHIBA KK9 citations74
US4794571ADec 27, 1988
Dynamic read-write random access memory
TOSHIBA KK13 citations74
US4710905ADec 1, 1987
Semiconductor memory device
TOSHIBA KK9 citations74
US4970688ANov 13, 1990
Memory device having operating function
TOSHIBA KK5 citations62