P

Inventor

UCHIDA YUKIMASA

32 patents
⚠️ This page may combine multiple inventors who share the name “UCHIDA YUKIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO SHIBAURA ELECTRIC CO

25 patents
US4814853AMar 21, 1989

Semiconductor device with programmable fuse

TOKYO SHIBAURA ELECTRIC CO60 citations96
US4585955AApr 29, 1986

Internally regulated power voltage circuit for MIS semiconductor integrated circuit

TOKYO SHIBAURA ELECTRIC CO98 citations96
US4517583AMay 14, 1985

Semiconductor integrated circuit including a fuse element

TOKYO SHIBAURA ELECTRIC CO63 citations96
US4432610AFeb 21, 1984

Liquid crystal display device

TOKYO SHIBAURA ELECTRIC CO142 citations96
US4385308AMay 24, 1983

Non-volatile semiconductor memory device

TOKYO SHIBAURA ELECTRIC CO111 citations96
US4044343AAug 23, 1977

Non-volatile random access memory system

TOKYO SHIBAURA ELECTRIC CO63 citations96
US4697252ASep 29, 1987

Dynamic type semiconductor memory device

TOKYO SHIBAURA ELECTRIC CO27 citations93
US4723155AFeb 2, 1988

Semiconductor device having a programmable fuse element

TOKYO SHIBAURA ELECTRIC CO33 citations92
US4608666AAug 26, 1986

Semiconductor memory

TOKYO SHIBAURA ELECTRIC CO53 citations92
US4532607AJul 30, 1985

Programmable circuit including a latch to store a fuse's state

TOKYO SHIBAURA ELECTRIC CO49 citations92
US4479202AOct 23, 1984

CMOS Sense amplifier

TOKYO SHIBAURA ELECTRIC CO38 citations92
US4327368AApr 27, 1982

CMOS Transistor pair with reverse biased substrate to prevent latch-up

TOKYO SHIBAURA ELECTRIC CO35 citations92
US4122541AOct 24, 1978

Non-volatile memory device

TOKYO SHIBAURA ELECTRIC CO34 citations92
US4641165AFeb 3, 1987

Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation

TOKYO SHIBAURA ELECTRIC CO21 citations82
US4453234AJun 5, 1984

Nonvolatile semiconductor memory device

TOKYO SHIBAURA ELECTRIC CO20 citations82
US3950737AApr 13, 1976

Nonvolatile counter circuit

TOKYO SHIBAURA ELECTRIC CO31 citations78
US4489339ADec 18, 1984

SOS MOSFET With self-aligned channel contact

TOKYO SHIBAURA ELECTRIC CO15 citations74
US4484209ANov 20, 1984

SOS Mosfet with thinned channel contact region

TOKYO SHIBAURA ELECTRIC CO10 citations74
US4467452AAug 21, 1984

Nonvolatile semiconductor memory device and method of fabricating the same

TOKYO SHIBAURA ELECTRIC CO16 citations74
US4287574ASep 1, 1981

Memory cell with non-volatile memory elements

TOKYO SHIBAURA ELECTRIC CO8 citations74
US4168537ASep 18, 1979

Nonvolatile memory system enabling nonvolatile data transfer during power on

TOKYO SHIBAURA ELECTRIC CO10 citations74
US4123771AOct 31, 1978

Nonvolatile semiconductor memory

TOKYO SHIBAURA ELECTRIC CO7 citations74
US4011576AMar 8, 1977

Nonvolatile semiconductor memory devices

TOKYO SHIBAURA ELECTRIC CO19 citations74
US4122531AOct 24, 1978

Memory and control circuit for the memory

TOKYO SHIBAURA ELECTRIC CO13 citations69
US4236170ANov 25, 1980

Gate controlled negative resistance semiconductor device

TOKYO SHIBAURA ELECTRIC CO2 citations63

TOSHIBA KK

7 patents