Inventor
NING TAK HUNG
US17 patents
⚠️ This page may combine multiple inventors who share the name “NING TAK HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
16 patentsUS5960265ASep 28, 1999
Method of making EEPROM having coplanar on-insulator FET and control gate
IBM163 citations98
US5886376AMar 23, 1999
EEPROM having coplanar on-insulator FET and control gate
IBM251 citations98
US4157269AJun 5, 1979
Utilizing polysilicon diffusion sources and special masking techniques
IBM130 citations93
US7244976B2Jul 17, 2007
EEPROM device with substrate hot-electron injector for low-power programming
IBM20 citations92
US6949764B2Sep 27, 2005
Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS
IBM36 citations92
US6870213B2Mar 22, 2005
EEPROM device with substrate hot-electron injector for low-power
IBM25 citations92
US6849871B2Feb 1, 2005
Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS
IBM18 citations92
US6437422B1Aug 20, 2002
Active devices using threads
IBM46 citations92
US5017990AMay 21, 1991
Raised base bipolar transistor structure and its method of fabrication
IBM34 citations92
US5723370AMar 3, 1998
FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures
IBM29 citations86
US7170112B2Jan 30, 2007
Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
IBM11 citations84
US6777809B2Aug 17, 2004
BEOL decoupling capacitor
IBM7 citations73
US6525427B2Feb 25, 2003
BEOL decoupling capacitor
IBM11 citations73
US4116721ASep 26, 1978
Gate charge neutralization for insulated gate field-effect transistors
IBM9 citations67
US7655983B2Feb 2, 2010
SOI FET with source-side body doping
IBM2 citations63
US7867866B2Jan 11, 2011
SOI FET with source-side body doping
IBM0 citations52