Inventor
FUJII TOYOKAZU
JP11 patents
⚠️ This page may combine multiple inventors who share the name “FUJII TOYOKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
10 patentsUS5355010AOct 11, 1994
Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD42 citations92
US5341014AAug 23, 1994
Semiconductor device and a method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations92
US5314848AMay 24, 1994
Method for manufacturing a semiconductor device using a heat treatment according to a temperature profile that prevents grain or particle precipitation during reflow
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US5278448AJan 11, 1994
Semiconductor device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations92
US5939132AAug 17, 1999
Alignment chips positioned in the peripheral part of the semiconductor substrate and method of manufacturing thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations82
US5451261ASep 19, 1995
Metal film deposition apparatus and metal film deposition method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations82
US5705845AJan 6, 1998
Semiconductor device with particular metal silicide film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US5652183AJul 29, 1997
Method for fabricating semiconductor device containing excessive silicon in metal silicide film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations73
US5459101AOct 17, 1995
Method for fabricating a semiconductor device comprising a polycide structure
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations73
US5104826AApr 14, 1992
Method for fabricating semiconductor integrated circuit device using an electrode wiring structure
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations73