Inventor

TASCH JR AL F

26 patents

⚠️ This page may combine multiple inventors who share the name “TASCH JR AL F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TASCH JR AL F

TEXAS INSTRUMENTS INC

Method of making semiconductor having improved interlevel conductor insulation

High performance submicron metal-oxide-semiconductor field effect transistor device structure

Fabrication methods for the high capacity ram cell

Semiconductor device having improved interlevel conductor insulation

Formation of submicron substrate element

Semiconductor device having a high breakdown voltage junction characteristic

Coating device with As2 -O3 -SiO2

Post-metal ion implant programmable MOS read only memory

Uniphase charge coupled devices

Charge coupled device random access memory

Self-aligned gate method for making MESFET semiconductor

Post-metal electron beam programmable MOS read only memory

Method of making post-metal ion beam programmable MOS read only memory

Dual plane well-type two-phase ccd

Dual plane barrier-type two-phase CCD

Silicon gate CCD structure

Silicon gate ccd structure

Semiconductor having improved interlevel conductor insulation

Multilevel interconnect system for high density silicon gate field effect transistors

Self-aligned gate method for making MESFET semiconductor

Very high density punch-through read-only-memory

Taper isolated ram cell without gate oxide

Doped oxide buried channel charge-coupled device

UNIV TEXAS

High mobility heterojunction transistor and method

Growth of polycrystalline CaF2 via low temperature OMCVD

MOTOROLA INC

High density non-charge-sensing DRAM cell